Method for judging whether adhesive film of grinding head is twisted or not

Abstract

The invention provides a method for judging whether an adhesive film of a grinding head is twisted or not. The grinding head comprises a first grinding area and multiple second grinding areas surrounding the first grinding area, the first grinding area is round, the second grinding areas are in concentric ring shapes, the first grinding area and the area at the juncture of the adjacent second grinding areas are adjacent areas, and the method comprises the steps of obtaining the grinding rate of the first grinding area and the grinding rates of the adjacent areas; and comparing the difference value between the grinding rate of the first grinding area and the grinding rates of the adjacent areas with the set value to judge whether the adhesive film of the grinding head is twisted or not. According to the method for judging whether the adhesive film of the grinding head is twisted or not, the grinding rate of the first grinding area and the grinding rates of the adjacent areas are calculated, and judging whether the adhesive film of the grinding head is twisted or not is achieved. Equipment does not need to be subjected to upgrading and reconstruction, and whether the adhesive film ofthe grinding head is twisted or not can be effectively judged.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for judging whether the adhesive film of a grinding head is twisted. Background technique [0002] Chemical Mechanical Polish (CMP) is a process that works together through a chemical reaction process and a mechanical polishing process. Generally, during the chemical mechanical polishing process, the polishing head exerts a certain pressure on the backside of the wafer, so that the front side of the wafer is close to the polishing pad. At the same time, the rotation of the grinding head drives the wafer and the grinding pad to rotate in the same direction, causing mechanical friction between the front of the wafer and the grinding pad. During the grinding process, a series of complex mechanical and chemical actions are used to grind the film on the surface of the wafer, so as to achieve the purpose of flattening the surface of the wafer. [0003] Th...

AI Technical Summary

Problems solved by technology

Due to the limitation of the structure of the polishing head, when the gasket in the polishing head ages, the adhesive film will be misaligned and twisted between the central grinding area and the adjacent grinding area, which further leads to the unevenness of the film on the wafer after chemical mechanical polishing. Good, lower wafer yield

Moreover, the detection system of the existing grinding equipment can only characterize the grinding rate (RR) of the grinding head and the uniformity of the thin film on the wafer, and the defects of dislocation and distortion of the adhesive film between the central grinding area and the adjacent grinding area cannot be effectively detected arrive

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