Schottky diode based on p-type nio thin film and bevel terminal structure and its manufacturing method
A technology of Schottky diode and terminal structure, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that the breakdown voltage cannot be reached, and achieve the effect of improving the breakdown voltage
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Embodiment 1
[0031] Embodiment 1, making low-doped n-type Ga 2 o 3 The slope structure depth is 400nm, the slope angle is 40°, the p-type NiO slope structure depth is 100nm, and the slope structure Schottky diode is etched at 40°.
[0032] Step 1, for a doping concentration of 5×10 18 cm -3 n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0033] 1a) Highly doped n-type Ga 2 o 3 The substrate is cleaned in an organic cleaning solution at 80°C for 22 minutes;
[0034] 1b) Cleaning the organically cleaned substrate with flowing deionized water for 45 seconds;
[0035] 1c) Put the cleaned substrate into HF:H 2 Corrosion in O=1:1 solution for 45s;
[0036] 1d) The etched Ga 2 o 3 The substrate was washed with flowing deionized water for 70 s, and dried with high-purity nitrogen gas.
[0037] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0038] Put the cleaned substrate into the MOCVD equipment, and the flow ra...
Embodiment 2
[0056] Embodiment 2, making low-doped n-type Ga 2 o 3 The slope structure depth is 500nm, the slope angle is 50°, the p-type NiO slope structure depth is 150nm, and the slope structure Schottky diode is etched at 50°.
[0057] Step 1, for a doping concentration of 1×10 19 cm -3 n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0058] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0059] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0060] Put the cleaned substrate into the MOCVD equipment to grow with a thickness of 1.8 μm and a doping concentration of 1×10 17 cm -3 Ga 2 o 3 Epitaxial layer, the process conditions are as follows:
[0061] TMGa flow is 6.0×10 -6 mol / min, O 2 The flow rate is 2.2×10-2 mol / min, the temperature is 850°C, and the pressure is 500Pa.
[0062] Step three, epitaxy cleaning.
[0063] The specific implementation of this step is the sam...
Embodiment 3
[0081] Embodiment three, making low-doped n-type Ga 2 o 3 The slope structure depth is 600nm, the etching angle is 60°, and the slope structure Schottky diode is p-type NiO slope structure depth is 200nm, and the etching angle is 60°.
[0082] Step A, for a doping concentration of 5×10 19 cm -3 n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0083] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0084] Step B, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0085] Put the cleaned substrate into the MOCVD equipment at the TMGa flow rate of 6.0×10 -6 mol / min, O 2 Flow 2.2×10 - 2 mol / min, temperature 850°C, and pressure 500Pa, the epitaxial growth thickness is 2 μm, and the doping concentration is 5×10 17 cm -3 n-type Ga 2 o 3 film.
[0086] Step C, epitaxial cleaning.
[0087] The specific implementation of this step is the same as step 3 of embodiment 1.
[0088] St...
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