Schottky diode based on double-step slope and manufacturing method thereof
A Schottky diode, double-step technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of insufficient breakdown voltage, and achieve the effect of reducing electric field strength, simple preparation process, and good repeatability
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Embodiment 1
[0042] Embodiment 1, making low-doped n-type Ga 2 o 3 A double-step bevel Schottky diode with a depth of 1 μm and a tilt angle of 40°, a mesa width of the first slope of 900 nm, and a depth of 1.5 μm of the second slope.
[0043] Step 1, pair electron concentration is 5×10 18 cm -3 highly doped n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0044] 1a) Highly doped n-type Ga 2 o 3 The substrate is cleaned in an organic cleaning solution at 80°C for 20 minutes;
[0045] 1b) Cleaning the organically cleaned substrate with flowing deionized water for 40 seconds;
[0046] 1c) Put the cleaned substrate into HF:H 2 Corrosion in O=1:1 solution for 60s;
[0047] 1d) The etched Ga 2 o 3 The substrate was rinsed with flowing deionized water for 60 s, and dried with high-purity nitrogen gas.
[0048] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0049] Put the cleaned substrate into the metal-organic c...
Embodiment 2
[0067] Embodiment 2, making low-doped n-type Ga 2 o 3 A double-step slope Schottky diode with a depth of 1 μm and a slope angle of 50°, a mesa width of the first slope of 600 nm, and a depth of 1 μm of the second slope.
[0068] Step 1, pair electron concentration is 1×10 19 cm-3 highly doped n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0069] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0070] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0071] Put the cleaned substrate into the MOCVD reaction chamber, respectively with TMGa and high-purity O 2 For Ga source and O source, set the reaction chamber temperature to 850°C, growth pressure to 220Pa, TMGa flow rate to 10 sccm, O 2 The flow rate is 350 sccm, the epitaxial growth thickness on the substrate is 3.2 μm, and the carrier concentration is 8×10 16 cm -3 Low-doped n-type Ga 2 o 3 film.
[0072] Step th...
Embodiment A
[0089] Embodiment A, making low-doped n-type Ga 2 o 3 A double-step slope Schottky diode with a depth of 1 μm and a slope angle of 60°, a mesa width of the first slope of 480 nm, and a depth of 800 nm of the second slope.
[0090] A1) The pair electron concentration is 5×10 19 cm -3 highly doped n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0091] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0092] A2) Epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0093] Put the cleaned substrate into the MOCVD reaction chamber, respectively with TMGa and high-purity O 2 For the Ga source and the O source, set the reaction chamber temperature to 900°C, the growth pressure to 220Pa, the TMGa flow rate to 10 sccm, and the O 2 The flow rate is 350sccm, the epitaxial growth thickness on the substrate is 3.5μm, and the carrier concentration is 3×10 17 cm -3 Low-doped n-type Ga 2 o 3 f...
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