Schottky diode based on p-type NiO thin film and inclined plane terminal structure and manufacturing method thereof
A technology of Schottky diode and terminal structure, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as failure to reach breakdown voltage, and achieve improved breakdown voltage and uniform distribution of fringe electric field strength The effect of reducing and improving the distribution of fringe electric field intensity
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Embodiment 1
[0031] Embodiment 1, making low-doped n-type Ga 2 o 3 The slope structure depth is 400nm, the slope angle is 40°, the p-type NiO slope structure depth is 100nm, and the slope structure Schottky diode is etched at 40°.
[0032] Step 1, for a doping concentration of 5×10 18 cm -3 n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0033] 1a) Highly doped n-type Ga 2 o 3 The substrate is cleaned in an organic cleaning solution at 80°C for 22 minutes;
[0034] 1b) Cleaning the organically cleaned substrate with flowing deionized water for 45 seconds;
[0035] 1c) Put the cleaned substrate into HF:H 2 Corrosion in O=1:1 solution for 45s;
[0036] 1d) The etched Ga 2 o 3 The substrate was washed with flowing deionized water for 70 s, and dried with high-purity nitrogen gas.
[0037] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0038] Put the cleaned substrate into the MOCVD equipment, and the flow ra...
Embodiment 2
[0056] Embodiment 2, making low-doped n-type Ga 2 o 3 The slope structure depth is 500nm, the slope angle is 50°, the p-type NiO slope structure depth is 150nm, and the slope structure Schottky diode is etched at 50°.
[0057] Step 1, for a doping concentration of 1×10 19 cm -3 n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0058] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0059] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0060] Put the cleaned substrate into the MOCVD equipment to grow with a thickness of 1.8 μm and a doping concentration of 1×10 17 cm -3 Ga 2 o 3 Epitaxial layer, the process conditions are as follows:
[0061] TMGa flow is 6.0×10 -6 mol / min, O 2 The flow rate is 2.2×10-2 mol / min, the temperature is 850°C, and the pressure is 500Pa.
[0062] Step three, epitaxy cleaning.
[0063] The specific implementation of this step is the sam...
Embodiment 3
[0081] Embodiment three, making low-doped n-type Ga 2 o 3 The slope structure depth is 600nm, the etching angle is 60°, and the slope structure Schottky diode is p-type NiO slope structure depth is 200nm, and the etching angle is 60°.
[0082] Step A, for a doping concentration of 5×10 19 cm -3 n-type Ga 2 o 3 Substrates undergo standard cleaning such as Figure 4 (a).
[0083] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0084] Step B, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as Figure 4 (b).
[0085] Put the cleaned substrate into the MOCVD equipment at the TMGa flow rate of 6.0×10 -6 mol / min, O 2 Flow 2.2×10 - 2 mol / min, temperature 850°C, and pressure 500Pa, the epitaxial growth thickness is 2 μm, and the doping concentration is 5×10 17 cm -3 n-type Ga 2 o 3 film.
[0086] Step C, epitaxial cleaning.
[0087] The specific implementation of this step is the same as step 3 of embodiment 1.
[0088] St...
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