High breakdown voltage Schottky diode and method of making the same
A technology of Schottky diode and high breakdown voltage, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problem of insufficient breakdown voltage, improve the distribution of edge electric field intensity, and improve the distribution of Schottky electrodes. Uniform distribution of fringe electric field intensity and improvement of breakdown voltage
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Embodiment 1
[0045] Embodiment 1, making low-doped n-type Ga 2 o 3 High breakdown voltage Schottky diode with ramp groove depth of 400nm and slope angle of 40°.
[0046] Step 1, for highly doped n-type Ga 2 o 3 Substrates undergo standard cleaning such as figure 2 (a).
[0047] 1a) Highly doped n-type Ga 2 o 3 The substrate is cleaned in an organic cleaning solution at 80°C for 20 minutes;
[0048] 1b) Cleaning the organically cleaned substrate with flowing deionized water for 40 seconds;
[0049] 1c) Put the cleaned substrate into HF:H 2 Corrosion in O=1:1 solution for 60s;
[0050] 1d) The etched Ga 2 o 3 The substrate was rinsed with flowing deionized water for 60 s, and dried with high-purity nitrogen gas.
[0051] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as figure 2 (b).
[0052] Put the cleaned substrate into the MOCVD reaction chamber, respectively with TMGa and high-purity O 2 For Ga source and O source, set the reaction chamber temperatur...
Embodiment 2
[0075] Example 2, making low-doped n-type Ga with an etching depth of 500 nm and an inclination angle of 50° 2 o 3 Ramp groove high breakdown voltage Schottky diodes.
[0076] Step 1, for highly doped n-type Ga 2 o 3 Standard cleaning of the substrate, such as figure 2 (a).
[0077] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0078] Step 2, epitaxial growth of low-doped n-type Ga 2 o 3 film, such as figure 2 (b).
[0079] Put the cleaned substrate into the MOCVD reaction chamber, respectively with TMGa and high-purity O 2 For Ga source and O source, set the reaction chamber temperature to 800°C, growth pressure to 120Pa, TMGa flow rate to 10 sccm, O 2 The flow rate is 300sccm, and the low-doped n-type Ga with a thickness of 700nm is epitaxially grown on the substrate 2 o 3 film.
[0080] Step 3, making ohmic contact electrodes, such as figure 2 (c).
[0081] 3.1) Highly doped n-type Ga after epitaxial growth 2 o 3 Evapo...
Embodiment A
[0101] Embodiment A, making etch depth is 600nm, the inclination angle is 60 ° of low-doped n-type Ga 2 o 3 Ramp groove high breakdown voltage Schottky diodes.
[0102] A1, for highly doped n-type Ga 2 o 3 Standard cleaning of the substrate, such as figure 2 (a).
[0103] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0104] A2, Epitaxial growth of low-doped n-type Ga 2 o 3 film, such as figure 2 (b).
[0105] Put the cleaned substrate into the MOCVD reaction chamber, respectively with TMGa and high-purity O 2 For Ga source and O source, set the reaction chamber temperature to 850°C, growth pressure to 120Pa, TMGa flow rate to 10 sccm, O 2 The flow rate is 300sccm, and the low-doped n-type Ga with a thickness of 800nm is epitaxially grown on the substrate 2 o 3 film.
[0106] A3, making ohmic contact electrodes, such as figure 2 (c).
[0107] Highly doped n-type Ga after epitaxial growth 2 o 3 Evaporate metal Ti / Au on th...
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