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goa circuit and display panel

A circuit and capacitor technology, applied in the field of GOA circuits and display panels, can solve the problems of long charging time, insufficient scanning signal potential, and low mobility, and achieve the effects of maintaining stability, improving stability, and reducing stress

Active Publication Date: 2022-07-12
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] When the display panel is displayed at a high frequency, due to the short charging time of the display area, the thin film transistor in the remote pixel has the problem of insufficient scanning signal potential due to the resistance and capacitance delay effect of the scanning line, especially for InGaZnO (IGZO) thin-film transistors, because the mobility of IGZO thin-film transistors is lower than that of low-temperature polysilicon (LTPS) thin-film transistors, and the charging time is longer, so compared with LTPS thin-film transistors, IGZO thin-film transistors need to improve their scanning. signal potential

Method used

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Embodiment Construction

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

[0036] In all the embodiments of the present application, the two electrodes of the thin film transistor except the gate are distinguished, and one electrode is called the source electrode, and the other electrode is called the drain electrode. Since the source and drain electrodes of thin film transistors are symmetrical, their source electrodes and drain electrodes are interchangeable. According to the form in the drawings, the middle termi...

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Abstract

The present application provides a GOA circuit and a display panel. In the GOA circuit, C1 and T2 are added to the pull-up module, and the coupling effect of C1 is used to increase the potential of the Q2 point, so that the T9 is turned on more thoroughly, and then the voltage is higher than the first constant. The second constant voltage high potential of the high potential is input by T9 and output as a scan signal, thereby, the potential of the scan signal can be raised from the first constant voltage high potential of the prior art to the second constant voltage high potential, which improves the performance of the scanning signal. The potential of the scanning signal can meet the requirements of increasing the scanning signal potential of the IGZO thin film transistor during high-frequency display in the LTPO technology, and is suitable for the synchronization requirements of the dynamic frame rate technology for product vision and stability. At the same time, the potential of the P point remains the first The constant voltage and high potential maintain the stability of the GOA circuit, or, when the scanning signal of the same potential is output, the potential of the P point is lower, which reduces the stress on T5 and T10, which is beneficial to improve the stability of the GOA circuit.

Description

technical field [0001] The present application relates to the field of display technology, and in particular, to a GOA circuit and a display panel. Background technique [0002] When the display panel is displayed at high frequency, due to the short charging time in the display area, the thin film transistor in the remote pixel often has the problem of insufficient scanning signal potential due to the resistance-capacitance delay effect of the scanning line, especially for indium gallium zinc oxide. For (IGZO) thin film transistors, since the mobility of IGZO thin film transistors is lower than that of low temperature polysilicon (LTPS) thin film transistors and the charging time is longer, IGZO thin film transistors need to improve the scanning efficiency compared to LTPS thin film transistors. signal potential. [0003] For example, the increasingly popular low-temperature polycrystalline oxide (LTPO) display technology combines low-temperature polysilicon (LTPS) thin-fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/20
CPCG09G3/20
Inventor 曹海明田超
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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