A vcsel array chip packaging structure based on substrate heat dissipation

Abstract

The invention discloses a VCSEL array chip packaging structure based on substrate heat dissipation, comprising: a top-emitting VCSEL array chip, a substrate layer, a solder layer and a heat sink arranged sequentially from top to bottom; the substrate layer is etched into a sheet-like structure , the solder layer is provided with a water passage structure, and the heat sink is provided with a water passage, a water inlet and at least one water outlet; the sheet structure, the water passage structure and the water passage form a continuous water-cooling channel, and the water-cooling passage has a water inlet end and at least one water outlet; the water inlet of the water cooling channel is connected to the water inlet, and at least one water outlet is correspondingly connected to at least one water outlet. The present invention uses a water flow heat dissipation system to replace the traditional solid heat sink heat sink device, and combines water cooling and solid heat sink to make up for the defect that the traditional solid heat sink heat sink device has a poor heat dissipation effect after working for a period of time, effectively improving Solved the heat dissipation problem of the top emission VCSEL array chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser chip packaging, in particular to a VCSEL array chip packaging structure based on substrate heat dissipation. Background technique [0002] Compared with edge-emitting semiconductor lasers, vertical cavity surface-emitting lasers (VCSEL) have superior performance such as small size, circular spot, low threshold current, single longitudinal mode output, high coupling efficiency, and easy two-dimensional array integration. Power VCSELs are widely used in laser printing, laser medical treatment, chip lithography, welding processing and other fields. [0003] However, because the GaAs substrate absorbs light in the 800nm ​​band, the VCSEL laser in this range can only adopt the top emission method. The top-emitting VCSEL array is far away from the heat sink, and its heat dissipation capability is worse than that of the flip-chip bottom-emitting VCSEL. It is difficult to achieve a good heat ...

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Problems solved by technology

[0003] However, due to the absorption of GaAs substrate on the light in the 800nm ​​band, the VCSEL laser in this range can only adopt the top emission mode.

The top-emitting VCSEL array is far away from the heat sink, and the heat dissipation capability is worse than that of the flip-chip bottom-emitting VCSEL. It is difficult to achieve a good heat dissipation effect by using a conventional heat sink.

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