High-power semiconductor stack smile correction and line width narrowing device and method

Abstract

The invention belongs to the field of semiconductor laser and particularly relates to a device and method for eliminating a high-power semiconductor stack smile face effect through two reflection type phase plates which are arranged in parallel and narrowing line width through a concave grating. The device comprises a laser source formed by a high-power semiconductor stack, a fast-axis collimation device, a smile face correcting reflection type phase plate, an aberration compensating reflection type phase plate, a concave lens, a convex lens and the concave grating. In order to solve the problem that line width narrowing is affected by the high-power semiconductor stack smile face effect, the invention provides the high-power semiconductor stack smile correcting and line width narrowing device and method; a traditional smile face correcting method based on a long-focus fast-axis collimation micro lens, a combined external cavity, a transmission type phase plate and the like is improved, element processing difficulty is reduced, and power expansibility of the high-power semiconductor stack line width narrowing method is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, and in particular relates to a device and method for eliminating the smile effect of high-power semiconductor stacks by using two reflective phase plates placed in parallel and narrowing the line width by using a surface grating. Background technique [0002] In recent years, semiconductor-pumped alkali metal vapor lasers have developed rapidly in the field of high-energy lasers. One of the key points it achieves is the matching of the pump spectral width and the atomic absorption spectral width. However, the Doppler linewidth of alkali metal atoms is extremely narrow (about 1pm) at room temperature. Even if a buffer gas of 0.1MPa (such as helium or ethane) is filled, the absorption spectrum width is only 20pm-40pm, while the output of commercially available semiconductor lasers The spectral width is 2-4nm, and it is difficult to achieve effective pumping. For this reason, the industry uses ...

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Problems solved by technology

[0006] It can be seen from the above that the existing methods such as telephoto and fast axis collimating micro-lenses take up a lot of space and are not suitable for high-power semiconductor stack light sources; the composite external cavity method has a complex structure and low integration and is difficult to assemble; the transmission phase plate dissipates heat Difficult, easy to damage, difficult to process

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