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A deep etching method for high-voltage LED chips

An LED chip, deep etching technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency and low luminous area ratio, and achieve the effect of increasing the luminous area ratio and increasing luminous efficiency.

Active Publication Date: 2022-02-22
江西乾照光电有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the light-emitting area of ​​the current high-voltage LED chip is relatively low, resulting in low luminous efficiency

Method used

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  • A deep etching method for high-voltage LED chips
  • A deep etching method for high-voltage LED chips
  • A deep etching method for high-voltage LED chips

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Embodiment Construction

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0044] The high-voltage LED chip is a light-emitting diode chip formed by dividing the prepared epitaxial layer into multiple independent core particles connected in series through deep etching trenches. Driven by a small current, it can achieve high power.

[0045] According to the number of connected chip units, high-voltage products with different driving voltages can be prepared, such as 2 or 3 or 6 chips in series, and the voltage can reach about 6V / 9V / 18V...

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Abstract

The present invention provides a deep etching method for a high-voltage LED chip, which uses the positive photoresist with the slope of the preset angle as a mask after two steps of uniform coating, two exposures, and two developments. Deep etching is performed on the bridges of the high voltage LED chips and the dicing lines, and deep etching is performed on the non-bridges of the high voltage LED chips at the same time using the negative photoresist with a vertical surface as a mask. It realizes the isolation grooves with different angles and different line widths etched deeply at one time, and realizes the full-cutting process without changing the width of the scribe line, and has a certain chamfer, thereby effectively increasing the light-emitting area of ​​the high-voltage LED chip Ratio, increasing the light output efficiency of the chip and COW without setting up a special test chip.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a method for deep etching of high-voltage LED chips. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor light-emitting device, which can convert electrical energy into light energy by using the principle of semiconductor P-N junction electroluminescence. It has the advantages of small size, low power consumption and long life, and has been widely used It is used in various scene lighting, backlight and car lights and other fields. [0003] With the continuous development of the industry, a new type of high-voltage (High Voltage, HV) LED chip has attracted much attention. Compared with ordinary LEDs, integrated high-voltage LEDs can reduce packaging costs, reduce the number of components and solder joints, and improve reliability. Higher, and its current is small, the voltage is high, there is no need for large-scale voltage conversion, the transfo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/08H01L33/06H01L33/00
CPCH01L33/08H01L33/06H01L33/005
Inventor 黄斌斌罗坤李永同李运军刘兆
Owner 江西乾照光电有限公司