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Deep etching method of high-voltage LED chip

An LED chip, deep etching technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency and low light-emitting area ratio, and achieve the effect of increasing the light-emitting area ratio and increasing light-emitting efficiency.

Active Publication Date: 2021-02-09
江西乾照光电有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the light-emitting area of ​​the current high-voltage LED chip is relatively low, resulting in low luminous efficiency

Method used

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  • Deep etching method of high-voltage LED chip
  • Deep etching method of high-voltage LED chip
  • Deep etching method of high-voltage LED chip

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Embodiment Construction

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0044] The high-voltage LED chip is a light-emitting diode chip formed by dividing the prepared epitaxial layer into multiple independent core particles connected in series through deep etching trenches. Driven by a small current, it can achieve high power.

[0045] According to the number of connected chip units, high-voltage products with different driving voltages can be prepared, such as 2 or 3 or 6 chips in series, and the voltage can reach about 6V / 9V / 18V...

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Abstract

The invention provides a deep etching method for a high-voltage LED chip, and the method comprises the steps: carrying out the deep etching of a bridging part and a cutting channel of the high-voltageLED chip through employing a positive photoresist with a preset angle inclined plane as a mask after twice photoresist uniformizing, twice exposure and twice development, taking a negative photoresist with a vertical plane as a mask, and simultaneously carrying out deep etching treatment on the non-bridging part of the high-voltage LED chip. According to the high-voltage LED chip, the isolation grooves with different angles and different line widths are deeply etched at a time, full-etching processing is achieved under the condition that the width of a cutting channel is not changed, the high-voltage LED chip has a certain chamfer, and therefore the light-emitting area proportion of the high-voltage LED chip is effectively increased, the light-emitting efficiency of the chip is improved,and a special test chip does not need to be arranged on a COW.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a method for deep etching of high-voltage LED chips. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor light-emitting device, which can convert electrical energy into light energy by using the principle of semiconductor P-N junction electroluminescence. It has the advantages of small size, low power consumption and long life, and has been widely used It is used in various scene lighting, backlight and car lights and other fields. [0003] With the continuous development of the industry, a new type of high-voltage (High Voltage, HV) LED chip has attracted much attention. Compared with ordinary LEDs, integrated high-voltage LEDs can reduce packaging costs, reduce the number of components and solder joints, and improve reliability. Higher, and its current is small, the voltage is high, there is no need for large-scale voltage conversion, the transfo...

Claims

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Application Information

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IPC IPC(8): H01L33/08H01L33/06H01L33/00
CPCH01L33/08H01L33/06H01L33/005
Inventor 黄斌斌罗坤李永同李运军刘兆
Owner 江西乾照光电有限公司