Test method for word line resistance
A test method and word line resistance technology, which is applied in the direction of measuring resistance/reactance/impedance, measuring devices, measuring electrical variables, etc., can solve the problem that three-dimensional memory cannot effectively and quickly measure the resistance of all word lines, etc.
Active Publication Date: 2021-10-15
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0004] The purpose of the present invention is to provide a method for testing the resistance of word lines to solve the technical problem that the intermediate drive three-dimensional memory cannot effectively and quickly measure the resistance of all word lines
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[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0023] Before describing the embodiments of the present invention, a three-dimensional memory will be described first. figure 1 A top view of an exemplary three-dimensional (3D) memory device according to some embodiments of the present disclosure is shown. A three-dimensional (3D) memory device may be a memory chip (package), a memory die, or any portion of a memory die, and may include one or more memory slices 101 , each of which may include a plurality of memor...
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The present invention provides a word line resistance testing method, comprising: providing a three-dimensional memory, wherein the three-dimensional memory includes at least two storage blocks, each of which includes a step area, a first storage area, and a second storage area . A plurality of word lines arranged at intervals, the first storage area and the second storage area are arranged on both sides of the step area, the plurality of word lines run through the step area and extend to the second A storage area and the second storage area, each word line in the step area is provided with a test key at a preset point; connect at least two word lines of the same layer of the storage block; test the two The resistance between the test keys is used as the test resistance; the resistance of each word line is calculated according to the test resistance. The invention solves the technical problem that the intermediate drive three-dimensional memory cannot effectively and quickly measure the resistance of all word lines.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for testing word line resistance. Background technique [0002] NAND memory (NAND) is a better storage device than hard disk drives, and has the advantages of low power consumption and light weight. Among them, the NAND memory with a three-dimensional (3D) structure is because the memory cells are three-dimensionally arranged on the substrate On the other hand, it has high integration density and large storage capacity, so it has been widely used in electronic products. [0003] The word line of the existing three-dimensional memory is driven from one end, and the signal on the word line is transmitted from one end to the other end. When the three-dimensional memory becomes thinner, the resistance of the word line will increase sharply, resulting in signal loading. Delay. In order to solve the influence of signal loading delay, it is necessary to drive th...
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IPC IPC(8): G11C29/12G11C16/04G11C16/08G01R27/02
CPCG01R27/02G11C16/0483G11C16/08G11C29/12G11C2029/1202
Inventor 黄磊薛磊刘仕芳汪锋张坤
Owner YANGTZE MEMORY TECH CO LTD