Over-erasure verification method and device based on real modeling, storage medium and terminal
A verification method and over-erasing technology, applied in the field of non-volatile memory verification, can solve the problems of inability to accurately verify the functions of non-volatile memory controllers, and cannot reflect the real characteristics of non-volatile memory, so as to achieve accurate verification and enhanced automation degree of effect
Active Publication Date: 2021-03-09
XTX TECH INC
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[0004] The purpose of the present invention is to provide an over-erasure verification method, device, storage medium and terminal based on real modeling, aiming at solving the problem that the existing over-erasure verification of storage units in an overly ideal memory cell model cannot reflect abnormal The true characteristics of volatile memory, the problem of not being able to accurately verify the function of the non-volatile memory controller
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[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.
[0036] It should ...
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The invention discloses an over-erase verification method and device based on real modeling, a storage medium and a terminal. The method comprises the steps: carrying out the modeling of a storage unit, needing to be subjected to over-erase restoration, in a nonvolatile memory through employing Verilog codes, generating a random number when an over-erase restoration instruction is received, and carrying out the over-erase restoration of the storage unit through employing the Verilog codes; performing over-erase repair on the storage units in the array model according to the random number, andwhen it is detected that the operation frequency reaches the random number, judging whether all the data of the storage units in the array model is written as 0 or not and outputting an over-erase modification verification result; in the verification stage of the control end of the nonvolatile memory, an array model highly close to reality is established through Verilog codes, the real characteristic of the control end of the nonvolatile memory for over-erase repair is simulated by verifying the array model, the operation accuracy of the control end can be verified more accurately, and the reliability of the control end is improved. The automation degree of verification is enhanced by automatically checking the result of the erasure repair operation.
Description
technical field [0001] The present invention relates to the technical field of non-volatile memory verification, in particular to an over-erasure verification method, device, storage medium and terminal based on real modeling. Background technique [0002] In the verification stage of the non-volatile memory control terminal, a memory cell model is often established to receive the controller operation and feedback the operation result. The traditional method is generally that the memory cell model will change the data in the storage unit that needs to be erased and repaired from 1 to 0 after receiving the erased and repaired data. The existing storage units in this memory cell model The over-erase verification method is completely idealized, and cannot reflect the real characteristics of the non-volatile memory, so it cannot accurately verify the function of the non-volatile memory controller. [0003] Therefore, the existing technology still needs to be improved and develo...
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IPC IPC(8): G11C16/34G11C29/44
CPCG11C16/3409G11C16/345G11C29/44
Inventor 张新展陈胜源朱雨萌张宇
Owner XTX TECH INC