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Iterative self-aligned patterning

A patterned, self-aligned technology that is used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as small light source resolution

Pending Publication Date: 2021-03-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As the pattern formed in the photoresist layer becomes more and more dense, it is difficult to form a pattern in the photoresist layer using a single photomask, because the features in the nanometer range are larger than the photoresist layer is exposed to. The resolution of the light source is smaller

Method used

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  • Iterative self-aligned patterning
  • Iterative self-aligned patterning
  • Iterative self-aligned patterning

Examples

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Embodiment Construction

[0030] The following disclosure provides a number of different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed Other parts are such that the first part and the second part are not in direct contact with the embodiment. Additionally, the present invention may repeat reference symbols and / or characters in multiple instances. This repetition is for simplicity and clarity, and does not in itself indicate a relationship between the various embodiments ...

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Abstract

A method for self-aligned patterning includes providing a substrate, forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate, depositing a first spacer layer over the mandrel layer, the first spacer layer including a first type of material, anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features, removing the mandrel layer, depositing a second spacer layer over remaining portions of the first set of spacers, and anisotropically etching the second spacerlayer to form a second set of spacers on sidewalls of the first set of spacers. The invention also relates to iterative self-aligned patterning.

Description

[0001] This application is a divisional application titled "Iterative Self-Aligned Patterning" and patent application number 201510193323.1 filed on April 22, 2015. technical field [0002] The present invention relates to the technical field of integrated circuits, and more particularly, to iterative self-aligned patterning. Background technique [0003] When manufacturing integrated circuits, various components such as metal lines are formed in semiconductor devices. To form these features, photomasks are used to form patterns in the photoresist layer. Removing the areas of the photoresist layer exposes the underlying substrate to the etch process used to form the trenches into which the metal will then be placed. [0004] As the pattern formed in the photoresist layer becomes more and more dense, it is difficult to form a pattern in the photoresist layer using a single photomask, because the features in the nanometer range are larger than the photoresist layer is exposed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/033H01L21/308
CPCH01L21/0337H01L21/0338H01L21/3086H01L21/3088H01L21/0273H01L21/304H01L21/31
Inventor 陈德芳林焕哲李俊鸿陈昭成
Owner TAIWAN SEMICON MFG CO LTD