Crucible hoisting device of semiconductor-grade silicon single crystal furnace and silicon single crystal furnace

A lifting device and technology for silicon single crystal, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of tray picking and placing, pollution, narrow space, etc., achieve less occupation, avoid touching the furnace wall, less demanding effect

Active Publication Date: 2021-03-30
南京晶能半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

by the figure 1 As we know, the gap between the crucible tray 1' and the inner wall of the furnace body 3' is very narrow, and when the crucible and the crucible tray are taken out or put back from the furnace body, the furnace body 3' cannot be touched to avoid contamination of the furnace by impurities. environment, so it is very troublesome to take and place the crucible and the crucible tray

Method used

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  • Crucible hoisting device of semiconductor-grade silicon single crystal furnace and silicon single crystal furnace
  • Crucible hoisting device of semiconductor-grade silicon single crystal furnace and silicon single crystal furnace
  • Crucible hoisting device of semiconductor-grade silicon single crystal furnace and silicon single crystal furnace

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Embodiment Construction

[0029] Please combine Figure 2 to Figure 7 As shown, this embodiment discloses a crucible lifting device for a semiconductor-grade silicon single crystal furnace, including a support 1, a cross turntable 2 located on the support 1, a push rod 3 connected to the cross turntable 2, several first connecting rods 4, several Second connecting rod 5, several third connecting rods 6, screw rod 7, slide block 8, hanger 9.

[0030] The cross turntable 2 includes four rotating arms 21 extending outward from the middle position, and the four rotating arms 21 together form a "cross" shape. The middle position of the cross turntable 2 is hinged with the support 1 and can rotate on the support 1 . The rear end of each first connecting rod 4 is hinged with the front end of a rotating arm 21 . The front end of each first connecting rod 4 is hinged with the rear end of a second connecting rod 5 . The front end of each second connecting rod 5 is hinged with the upper end of a third connecti...

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Abstract

The invention discloses a crucible hoisting device of a semiconductor-grade silicon single crystal furnace and the silicon single crystal furnace. The hoisting device surrounds the periphery of the crucible tray through a third connecting rod extending downwards, bears the crucible tray through hooks and lifts the crucible tray out. Opening and closing operation of the third connecting rod is driven by the first connecting rod, the second connecting rod and the cross-shaped rotating disc which are located on the support, the first connecting rod, the second connecting rod and the cross-shapedrotating disc do not occupy the space in the furnace, the opening and closing angle of the third connecting rod can be accurately controlled, and furnace wall touch is avoided. The crucible hoisting device occupies little space in the furnace, and is specially used in an environment with a small gap between the crucible in the silicon single crystal furnace and the furnace wall.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal furnaces. Background technique [0002] In the field of semiconductor technology in the prior art, it is necessary to use a silicon single crystal furnace to prepare silicon wafers through a pulling method. For example, the Chinese patent application whose publication number is 105177701A discloses a silicon single crystal furnace of the prior art. The crystal is prepared in a crucible, and the crucible is set on the pulling shaft through the crucible tray. The periphery of the crucible is a furnace body with a thermal field. [0003] During the preparation of a single crystal furnace, the required process includes taking out the crucible and the crucible tray from the furnace body, or putting them back into the furnace body. And as figure 1 As shown, when the crucible tray 1' carrying the crucible is carried on the lifting shaft 2', the state diagram in the furnace body 3'. by...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 姜宏伟郭志强郑锴
Owner 南京晶能半导体科技有限公司
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