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Pulse programming method and device, computer readable storage medium and processor

A programming pulse and storage medium technology, applied in the field of memory, can solve the problems of high programming voltage and poor wear performance

Pending Publication Date: 2021-04-09
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of this application is to provide a method, device, computer-readable storage medium and processor for programming pulses, so as to solve the problem that the first pulse programming voltage of SLC in the prior art is large, resulting in poor wear performance

Method used

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  • Pulse programming method and device, computer readable storage medium and processor
  • Pulse programming method and device, computer readable storage medium and processor
  • Pulse programming method and device, computer readable storage medium and processor

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Embodiment Construction

[0024] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0025] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0026] It should be noted that the terms "first" and "second...

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Abstract

The invention provides a pulse programming method and a device, a computer readable storage medium and a processor, and the method comprises the steps: forming a first step type programming pulse which comprises a first pulse, at least one second pulse and a third pulse which are sequentially continuous, wherein the peak value of the first pulse is a first peak voltage, the peak value of the second pulse is a second peak voltage, the peak value of the third pulse is a third peak voltage, the second peak voltage is greater than the first peak voltage and less than the third peak voltage, and the first step type programming pulse is used for storing at least one page of a memory. According to the method, the phenomenon that in the prior art, the pulse voltage directly rises from the first peak voltage to the third peak voltage, so that the SLC is impacted by strong electric field stress is effectively relieved, the influence of large programming voltage on the abrasion performance of the SLC is avoided, and it is guaranteed that the abrasion performance of the SLC is good.

Description

technical field [0001] The present application relates to the field of memory, in particular, to a programming pulse method, device, computer-readable storage medium and processor. Background technique [0002] At present, the mainstream programming pulse method of NAND Flash (flash memory memory) is to program pulse voltage according to incremental step pulse programming (Incremental Step Pulse Programming, referred to as ISPP), and program verification (program verify) is performed after each programming pulse, such as figure 1 and figure 2 shown. The programming pulse shape is mainly a two-phase pulse voltage (two-phase pulse), that is, the pulse voltage first rises to a smaller Vpass voltage, and then rises to a larger programming voltage Vpgm and maintains it for a period of time, such as figure 2 shown. [0003] NAND Flash can store one bit, such as single-level cell flash (single-level cell, SLC for short), or multi-bit storage, such as multi-level cell flash mem...

Claims

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Application Information

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IPC IPC(8): G11C16/12G11C16/34
CPCG11C16/12G11C16/34
Inventor 黄开谨张艳闾锦
Owner YANGTZE MEMORY TECH CO LTD