Method for testing single event upset cross section of solid state disk

Abstract

The invention relates to a method for testing a single event upset cross section of a solid state disk. The method comprises the following steps of: separately counting single event upset of a tested flash memory unit and single event upset of an internal control chip; only multiplying the single event upset count (not all single event upset counts) of the tested flash memory unit by the ratio of the capacity of the solid state disk to the capacity of the tested flash memory unit; adding the single event upset count of the internal control chip, and finally taking the single event upset count as the whole single event upset count of the solid state disk; and irradiating the tested solid state disk with high-energy particles, starting to count the total fluence Q, and calculating the single event upset cross section of the tested solid state disk in combination with the single event upset count of the whole solid state disk obtained in S2. The method for testing the single event upset cross section of the solid state disk can solve the problem that the sensitive degree of the solid state disk to the single event effect cannot be accurately reflected, the accuracy of testing the single event effect of the solid state disk is improved, and the sensitive degree of the solid state disk to the single event effect is accurately reflected.

Description

technical field [0001] The invention relates to the related technical field of solid-state hard disk testing, in particular to a testing method for a single-particle flip section of a solid-state hard disk. Background technique [0002] Due to its large capacity and fast access speed, solid-state drives have been more and more widely used in the aerospace field; however, solid-state drives used in harsh radiation environments such as aerospace will suffer from single event upset (Single-EventUpset, SEU) caused an error, resulting in immeasurable losses; [0003] With the improvement of technology level, the capacity of solid-state hard disk is getting larger and faster, the access speed is getting faster and faster, the transistor size of its internal flash memory unit and control chip is getting smaller and smaller, and the sensitivity to the single event upset effect is rising rapidly. It is easy to cause soft errors due to the single event flipping effect, which will adv...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a test method for the single event flip cross section of a solid state hard disk, to solve the problem that the current test method for ...

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