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Magnetoresistive random access memory

A technology of magnetic tunneling and magnetic tunnel junction, which is applied in the fields of magnetic field-controlled resistors, electric solid devices, semiconductor devices, etc., can solve the problems of power consumption, insufficient sensitivity, and occupying chip area.

Active Publication Date: 2021-05-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of the above-mentioned prior art generally include: larger chip area, more expensive manufacturing process, more power consumption, insufficient sensitivity, and susceptibility to temperature changes, etc., and it is necessary to further improve

Method used

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  • Magnetoresistive random access memory
  • Magnetoresistive random access memory
  • Magnetoresistive random access memory

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Embodiment Construction

[0032] Please refer to Figure 1 to Figure 3 , figure 1 Top view of a semiconductor device, or more specifically an MRAM cell, fabricated for an embodiment of the present invention, figure 2 for figure 1 A schematic cross-sectional view of making a semiconductor element along the tangent line AA', image 3 then figure 1 A schematic cross-sectional view of a semiconductor element fabricated along the tangent line BB'. Such as Figure 1 to Figure 3 As shown, a substrate 12 is firstly provided, for example, a substrate 12 made of a semiconductor material, wherein the semiconductor material can be selected from silicon, germanium, silicon-germanium compound, silicon carbide (siliconcarbide), gallium arsenide (gallium arsenide), etc. A group is formed, and a magnetic tunneling junction (MTJ) region 14 and a logic region 16 are preferably defined on the substrate 12 .

[0033] The substrate 12 may include active (active) elements such as metal-oxide semiconductor (MOS) transi...

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Abstract

The invention discloses a magnetoresistive random access memory, and the random access memory mainly comprises a first magnetic tunnel junction (MTJ), a second MTJ and a dummy MTJ, wherein the second MTJ is arranged on a substrate, the dummy MTJ is arranged between the first MTJ and the second MTJ, and the bottom of the dummy MTJ is not connected with any metal. The semiconductor device further includes a first metal interconnect disposed under the first MTJ, a second metal interconnect disposed under the second MTJ, and a first intermetallic dielectric layer surrounding the first metal interconnect and the second metal interconnect and disposed directly under the dummy MTJ.

Description

technical field [0001] The present invention relates to a semiconductor element, in particular to a magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM). Background technique [0002] It is known that the magnetoresistance (MR) effect is the effect that the resistance of the material changes with the change of the applied magnetic field. The definition of its physical quantity is the resistance difference under the presence or absence of a magnetic field divided by the original resistance, which is used to represent the resistance change. Rate. At present, the magnetoresistance effect has been successfully used in the production of hard disks, and has important commercial application value. In addition, using the characteristics of giant magnetoresistance materials having different resistance values ​​in different magnetization states, it can also be made into magnetic random access memory (MRAM), which has the advantage that it can continue t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22
CPCH10B61/22H10N50/10H10B61/00H10N50/80H10N50/01
Inventor 王慧琳许博凯张境尹陈宏岳王裕平吴家荣黄瑞民蔡雅卉张翊凡
Owner UNITED MICROELECTRONICS CORP
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