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TFT substrate glass annealing process and TFT substrate glass prepared by adopting same

An annealing process and substrate technology, applied in the field of TFT substrate glass, can solve the problems of small reheat shrinkage rate and inability to realize TFT substrate glass, etc.

Active Publication Date: 2021-05-11
BEIJING UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a TFT substrate glass annealing process and the TFT substrate glass prepared by it, which solves the problem that the prior art cannot realize the smaller reheat shrinkage rate of the TFT substrate glass

Method used

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  • TFT substrate glass annealing process and TFT substrate glass prepared by adopting same
  • TFT substrate glass annealing process and TFT substrate glass prepared by adopting same
  • TFT substrate glass annealing process and TFT substrate glass prepared by adopting same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046]OLEDs with a thickness of 0.4 mm show that the TFT substrate glass is formed by an overflow method, and the specific process is:

[0047]In the insulation phase,It is 40 ° C / s, an annealing furnace insulation section is 800 mm, and the formed substrate glass requires annealing time 8s;

[0048]In slow cooling stage, temperature range Tm400 ° C, slow cooling rate VmTake 49.43 ° C / s, annealing slow-free segment glass plate operation speed V0100mm / s, annealing furnace slow cooling length Lm809mm;

[0049]In the fast-cooling phase, the temperature range Tk300 ° C, fast cooling rate VkIn 197.73 ° C / s, annealing furnace fast-free section glass plate operation speed V1100mm / s, annealing furnace fast cooling length LkIt is 152mm.

Embodiment 2

[0051]OLEDs with a thickness of 0.5 mm show that the TFT substrate glass is formed by an overflow method, and the specific process is:

[0052]In the insulation phase,It is 50 ° C / s, the annealing furnace insulation section is 1000 mm, and the forming substrate glass requires annealing time 10s;

[0053]In slow cooling stage, temperature range Tm400 ° C, slow cooling rate Vm33.08 ° C / s, annealing furnace slow-free section glass plate operation speed V0100mm / s, annealing furnace slow cooling length Lm1209mm;

[0054]In the fast-cooling phase, the temperature range Tk300 ° C, fast cooling rate VkFor 132.32 ° C / s, annealing furnace fast-free section glass plate operation speed V1100mm / s, annealing furnace fast cooling length Lk227mm.

Embodiment 3

[0056]OLEDs with a thickness of 0.6 mm show that the TFT substrate glass is formed by an overflow method, and the specific process is:

[0057]In the insulation phase,It is 60 ° C / s, the annealing furnace insulation section is 1200mm, and the formed substrate glass requires annealing time 12s;

[0058]In slow cooling stage, temperature range Tm400 ° C, slow cooling rate VmFor 23.83 ° C / s, annealing slow-free segment glass plate operation speed V0100mm / s, annealing furnace slow cooling length Lm1679mm;

[0059]In the fast-cooling phase, the temperature range Tk300 ° C, fast cooling rate Vk95.30 ° C / s, annealing furnace fast-free section glass plate operation speed V1100mm / s, annealing furnace fast cooling length Lk315mm.

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Abstract

The invention belongs to the technical field of TFT substrate glass processing, and particularly discloses a TFT substrate glass annealing process based on a cooling setting rate which forms a theoretical basis for processing parameters of the existing three stages, namely, a heat preservation stage, a slow cooling stage and a rapid cooling stage, provides data support for the annealing processing process, and provides great convenience for the industry. After the annealing process is adopted, the annealing quality of the TFT substrate glass produced by an overflow method is greatly improved, the reheat shrinkage rate and the maximum stress value are reduced by 75% or more, the reheat shrinkage rate of the TFT substrate glass for OLED display is 5-8 ppm, the reheat shrinkage rate of the TFT substrate glass for LCD display is 24-45 ppm, and the maximum stress of the surface of the TFT substrate glass is 30-60 PSI.

Description

Technical field[0001]The present invention belongs to the field of TFT substrate glass processing technology, and a TFT substrate glass annealing process and a TFT substrate glass prepared thereof are disclosed.Background technique[0002]The substrate glass production is formed by a glass melt to be quickly cooled, and the mass point is deviated from the balance position during the cooling tolerance, but the annealing furnace is relatively short, the substrate glass is not annealed, heat shrinkage It is often up to tens of ppm (shrinkage amount and original length ratio), even hundredppm, unable to achieve high resolution LCD and OLED display product requires that the refroser of the substrate glass is less than 10 ppm requirements.[0003]The overflow method is a very important process of TFT substrate glass production. The high-end substrate glass in the world is achieved by the process method. It is a vertical production process. It is highly limited by the production workshop. The ...

Claims

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Application Information

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IPC IPC(8): C03B25/00
CPCC03B25/00
Inventor 田英良李淼赵志永王答成王为徐剑
Owner BEIJING UNIV OF TECH