An imaging device and imaging method based on dmd and algan-based multi-element ultraviolet detectors

Abstract

The invention provides an imaging device based on a DMD and an AlGaN-based multi-element ultraviolet detector, belonging to the field of semiconductor technology, including an ultraviolet optical lens, a DMD, a DMD control module, an AlGaN-based multi-element ultraviolet detector, a signal processing module, a data acquisition module, Image reconstruction module; the DMD control module is electrically connected to the DMD, the signal processing module, and the data acquisition module, and the data acquisition module is also electrically connected to the image reconstruction module. The invention also provides an imaging method based on DMD and AlGaN-based multi-element ultraviolet detector. The imaging device and imaging method based on DMD and AlGaN-based multi-element ultraviolet detectors of the present invention use DMD and multi-element AlGaN-based ultraviolet detectors in combination to realize high-resolution ultraviolet imaging, and use the DMD imaging mechanism to solve the problem of high resolution of traditional AlGaN area arrays. The problem of high blind element rate in high-resolution imaging, and the use of multiple AlGaN detectors solves the problem of long imaging time in single-tube high-resolution imaging.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an imaging device and an imaging method based on a DMD and an AlGaN-based multi-element ultraviolet detector. Background technique [0002] The ultraviolet imaging system has very broad application prospects in the fields of national defense construction and major national engineering projects. With the increasing requirements of electronic warfare on equipment anti-jamming, precise positioning, precise strike, and rapid response, it has become increasingly difficult for a single infrared detection system to meet the needs of modern national defense, while the ultraviolet imaging system can achieve high anti-jamming, high Flexibility and high response speed will definitely become the inevitable choice for national defense equipment. [0003] The wide bandgap AlGaN semiconductor material is a ternary alloy of GaN and AlN, which has many excellent characteristics, such as h...

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to address the above-mentioned defects of the prior art, to provide an imaging device and imaging method based on DMD and AlGaN-based multi-element ultraviolet detectors, and to realize high-resolution ultraviolet imaging by using DMD and multi-element AlGaN-based ultraviolet detectors in combination, Using the DMD imaging mechanism, the problem of high blind element rate in traditional AlGaN area array high-resolution imaging is solved, and the problem of long imaging time in single-tube high-resolution imaging is solved by using multiple AlGaN detectors

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