Examination device
A technology for inspection devices and inspection rooms, applied in the direction of measuring devices, material analysis through optical means, instruments, etc., to achieve the effect of suppressing pollution
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Embodiment approach 1
[0049] figure 1 It is a schematic plan view showing components of the inspection device 10 according to Embodiment 1 of the present invention. When the cassette 200 carrying the semiconductor wafer 20 as a substrate is installed in the inspection apparatus 10 , the semiconductor wafer 20 is introduced into the inspection apparatus 10 by the processing mechanism 300 , and the semiconductor wafer 20 is aligned by the pre-aligner 310 . Thereafter, the semiconductor wafer 20 is transported to the inspection room 100 . The inspection chamber 100 receives the semiconductor wafer 20 at a receiving position (Transfer Position: TP), moves to an inspection position (Measurement Position: MP), and starts inspection of the semiconductor wafer 20 . Thereafter, the entire surface of the semiconductor wafer 20 is inspected by moving while rotating from the MP position toward the TP position. The gas supply device 110 supplies a clean gas flow into the inspection chamber 100 .
[0050] f...
Embodiment approach 2
[0097] Figure 7A It is a figure which shows the structural example of the rectifying plate 140 in Embodiment 2 of this invention. The structure other than the rectifying plate 140 is the same as that of Embodiment 1, so the following description will mainly be made on the points of difference related to the rectifying plate 140 . In the second embodiment, the angle formed by the first portion 141 and the second portion 142 is an obtuse angle and larger than that in the first embodiment. In Embodiment 2, similarly to Embodiment 1, the function of guiding the air flow below table 120 is produced, but it differs from Embodiment 1 in the following points.
[0098] In order to keep the periphery of the semiconductor wafer 20 clean, it is preferable to reliably guide the clean air flow from above the semiconductor wafer 20 toward below the stage 120 . As shown in FIG. 6 , in Embodiment 2, the distance between the first portion 141 and the upper surface of the table 120 is configu...
Embodiment approach 3
[0101] Figure 7B It is a figure which shows the structural example of the rectifying plate 140 in Embodiment 3 of this invention. The structure other than the rectifying plate 140 is the same as that of Embodiment 1, so the following description will mainly be made on the points of difference related to the rectifying plate 140 . In Embodiment 3, the rectifying plate 140 is curved in an arched shape. A portion of the arch that substantially overlaps the upper surface of the table 120 when projected onto a horizontal plane corresponds to the first portion 141 , and the remaining portion corresponds to the second portion 142 .
[0102] Also in the third embodiment, as in the first embodiment, the function of guiding the clean gas flow supplied by the gas supply device 110 from above the semiconductor wafer 20 to below the stage 120 is produced. Furthermore, similarly to Embodiment 2, the distance between the first portion 141 and the upper surface of the table 120 gradually d...
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