Method for improving measurement precision of nonlinear optical coefficient of thin-film-state material
A technique of nonlinear optics and measurement accuracy, applied in the interdisciplinary fields of optoelectronics, nonlinear optics, and materials science, it can solve the problems of closeness and overlap of nonlinear signal intensity, and the accuracy of measurement results cannot be guaranteed, so as to improve the measurement accuracy. , the effect of suppressing influence
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[0028] Specific examples of the present invention will be described in detail below with reference to the accompanying drawings.
[0029] In this example, the base material selected is 50μmMgF 2 The substrate, the film material is SiO 2 . 200nm SiO2 was prepared by electron beam evaporation technology 2 Thin films plated on 50μmMgF 2 on the base, as figure 1 shown.
[0030] Using Z-scan technology to test the nonlinear optical coefficient of thin film materials, figure 2 Schematic diagram of the dual-arm Z-scanning device. The incident laser is a femtosecond pulse laser with a wavelength of 515 nm, a pulse width of 230 fs, a pulse repetition frequency of 1 kHz, a beam waist radius of 4 mm before focusing, and a convex lens focal length of 150 mm.
[0031] The following takes the measurement of the two-photon coefficient of thin film materials as an example to measure 200nm SiO 2 Nonlinear signals for thin films:
[0032] 1. Determination of 50 μm MgF 2 The energy ra...
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