Semiconductor active and passive integrated coupling method

Abstract

The invention provides a semiconductor active and passive integrated coupling method, and the method is used for performing high-precision alignment coupling on a laser diode (1) and a passive waveguide (7) on a silicon substrate (4), and comprises the following steps: forming a plurality of conductive material columns (2) on the surface of the laser diode (1); forming a plurality of matched struts (3) or etched silicon nails on one side, matched with the surface of the laser diode (1), of the silicon substrate (4); enabling the conductive material column (2) and the matching support column (3) to move along opposite directions, dynamically assembling the conductive material column (2) and the matching support column (3), and pressing the conductive material column (2) on the matching support column (3) or the etching silicon nail; applying a current to a P contact and an N contact formed by the matching pillars (3) on the silicon substrate (4), and electrifying the laser diode (1); once the P contact (6) and the N contact (5) of the laser diode reach the required position, enabling the laser diode (1) to stay at the position, and completing the active integrated coupling of the laser diode (1) and the passive waveguide (7).

Description

technical field [0001] The invention relates to the field of semiconductor components and chip manufacturing, in particular to a semiconductor active and passive integration coupling method. Background technique [0002] Such as figure 1 As shown, silicon photonics has been working on how to integrate discrete laser diodes made of semiconductor III-V materials with circuits on silicon. The light from a laser diode must be precisely aligned with an optical waveguide on a silicon substrate in order to function precisely. Among them, the laser diode can be made of InP or GaAs substrate or other semiconductor materials. The wavelength of the laser can be in the range of 1.1-1.7um or other wavelengths. [0003] Such as figure 2 As shown, some passive alignment techniques in the prior art use steps etched on the laser diode and the silicon substrate to precisely position the structural schematic diagram of the laser diode chip. Other prior art requires bonding thin laser mat...

AI Technical Summary

Problems solved by technology

All of these technologies require very fine dimensional control and positioning technology with sub-micron precision, which is very technically difficult

In add

Images