Dimming glass and preparation method thereof
A dimming glass and dimming technology, applied in optics, nonlinear optics, instruments, etc., can solve the problems of uneven color and single color control range, reduce production costs, increase color control range, and color coordinate range. wide range of effects
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[0027] In addition, an embodiment of the present invention also provides a method for preparing a switchable glass, for example, for preparing the aforementioned switchable glass 200 . Such as figure 2 As shown, the preparation method of dimming glass includes steps, for example:
[0028] S11: Provide a substrate.
[0029]S12: forming a first conductive layer on the substrate. Specifically, the substrate is heated to a preset temperature, the range of the preset temperature is, for example, 280-300°C, and one or a combination of at least two of FTO, ITO, IGZO, AZO, GZO, and Ag is used as the target material , and deposit the first conductive layer under the preset vacuum sputtering pressure. The preset vacuum sputtering pressure is, for example, 1.0E -3 ~9.0E - 3 mbar. Preferably, the first conductive layer may also be a pre-prepared conductive film layer. This can achieve better refractive index matching between film layers.
[0030] S13: forming a first auxiliary d...
specific Embodiment
[0047] A kind of dimming glass, its film layer structure from the substrate to the outside is: ITO (150nm) / NiVOx (80nm) / Li (40nm) / WMoOx (200nm) / ITO (150nm) / WMoOx (200nm) / NiVOx (80nm ) / Li(40nm) / ITO(150nm) / WMoOx(200nm) / Li(40nm) / NiVOx(80nm) / ITO(120nm) / Si 3 N 4 (20nm).
[0048] The process of preparing this dimming glass is as follows:
[0049] (1) The substrate is cleaned and dried, laser scribed, then cleaned and dried, and placed in a vacuum sputtering area;
[0050] (2) Deposit the ITO layer on the substrate by means of magnetron sputtering, the target used is an ITO rotating target, the power supply is DC or an intermediate frequency power supply with a frequency of 2000-40000Hz, the power is 1-30KW, and the process gas is argon , deposited at a temperature of 290°C;
[0051] (3) The NiVOx layer is deposited on the ITO layer by magnetron sputtering, the target used is a metal NiV planar target, the power supply is a DC power supply, the power is 1-30KW, and th...
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