Dual emission LED chip

An LED chip, double-sided light-emitting technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of power consumption, manufacturing cost, thickening of thickness, etc., to achieve miniaturization, reduce total internal reflection, and reduce manufacturing costs. Effect

Pending Publication Date: 2021-08-06
NANO X
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  • Claims
  • Application Information

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Problems solved by technology

Therefore, in order to emit light from both sides by using the existing LED chip, it is necessary to mount the LED chip on each surface separately, and in this case, there are problems of increased thickness, serious power consumption problem, and increased manufacturing cost

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no. 1 example

[0073] On the other hand, in the P-N junction 10, heat is generated together with the light emitting effect. Therefore, the P-N junction 10 may have a mesa structure, which promotes heat generation by increasing the surface area of ​​each layer. Here, the "mesa structure" refers to a structure in which a plurality of islands are formed by engraving the surface of each layer to a predetermined depth, and the edge of each island is a vertical cliff or slope. According to the first embodiment of the present invention, the P-N junction includes a P-direction mesa structure PMS formed on the surface of the P layer and an N-direction mesa structure NMS formed on the surface of the N layer.

[0074] The P-direction mesa structure PMS is a mesa structure formed by engraving from the upper surface of the P layer P to a predetermined depth of the N layer N, forming a plurality of P-direction islands 110 . The number of P-direction islands 110 may vary according to design. Since the P-...

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Abstract

The present invention is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The present invention can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip manufactured according to the present invention can be manufactured through a batch process, a separate packaging process is not required. Furthermore, the dual emission LED chip according to the present invention has the effect of increasing light efficiency by reducing the internal total reflection of light generated from an LED.

Description

technical field [0001] The present invention relates to a double-sided light-emitting LED chip, more specifically, to a double-sided light-emitting LED chip that emits light on the upper side and the lower side respectively as a single LED chip. Background technique [0002] Existing LED chips only emit light in one direction based on the P-N junction surface. Therefore, in order to emit light from both sides by using the existing LED chip, it is necessary to separately mount the LED chip on each surface, and in this case, there are problems of increased thickness, severe power consumption, and increased manufacturing cost. [0003] (Prior art literature) [0004] (patent documents) [0005] Prior Art Document 1: Korean Laid-Open Patent No. 10-2012-0040972 (publication date: April 30, 2012) [0006] Prior Art Document 2: Korean Authorized Patent No. 10-1342418 (authorization date: December 11, 2013) Contents of the invention [0007] technical problem [0008] The tec...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/24H01L33/38
CPCH01L21/027H01L21/311H01L21/78H01L21/683H01L33/08H01L33/20H01L33/382H01L33/387H01L33/405H01L33/58H01L33/56H01L33/0093H01L2933/0016H01L2933/0033H01L2933/005H01L2933/0058H01L2933/0083H01L33/005H01L33/0008H01L21/6835H01L33/22H01L21/0274H01L21/31116H01L33/007H01L33/0095H01L33/24H01L33/32H01L33/44H01L33/62H01L2933/0025H01L2933/0066
Inventor 朴斗镇张弼国
Owner NANO X
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