A silicon-based light-emitting diode structure and preparation method thereof

Abstract

The invention belongs to the technical field of LED chips, and provides a silicon-based light-emitting diode structure, including a silicon-based substrate divided into an N electrode region and a P electrode region by an insulating filling region, and a silicon-based substrate of the N electrode region and the P electrode region. N welding electrodes and P welding electrodes are respectively provided on the bottom surface; N-GaN layer, quantum well layer, P-GaN layer and transparent conductive layer are arranged on the front of the silicon-based substrate in the N electrode area from bottom to top, and the transparent conductive layer is above A passivation insulating layer covering the insulating filling area is provided, and a P electrode transmission layer extending and covering the silicon-based substrate in the P electrode region is arranged above the passivation insulation layer, and the P electrode transmission layer passes through the exposed regions on the passivation insulation layer respectively. It is in contact with the transparent conductive layer and the silicon-based substrate in the P electrode region. The invention can realize the electrical connection with the packaging substrate without welding wires, without considering the problems of anti-substance diffusion, unstable performance, poor weldability, etc., and can be manufactured as required special-shaped appearance structures according to requirements.

Description

technical field [0001] The invention relates to the technical field of LED chips, in particular to a silicon-based light-emitting diode structure and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED) is a solid-state semiconductor device that can convert electrical energy into visible light. It is widely used in display screens, traffic signals, display light sources, automotive lights, LED backlights, and lighting sources. . The substrates mainly used in LED epitaxy can be divided into transparent and non-transparent. Transparent substrates are represented by sapphire and silicon carbide, which are mainly characterized by non-conductivity and low absorption rate in the visible light band, and are transparent; opaque substrates are represented by silicon and gallium arsenide, which are mainly characterized by conductivity and performance is opaque. [0003] Transparent and non-conductive sapphire-based and silicon carbide-based epitaxy...

AI Technical Summary

Problems solved by technology

Both the front-mounted structure and the vertical structure need to be electrically connected to the packaging substrate by soldering gold wires. The flip-chip structure can make the electrodes directly bonded to the electrodes of the packaging substrate to form an electrical connection. The yield rate of the flip chip is high, the process is less, and the stability of the flip chip structure is better than that of the wire bonding process. However, since the chip surface of the flip chip is directly adjacent to the solder, the diffusion between substances will be difficult after long-term work. This leads to a decrease in the stability of the chip. In addition, it is difficult for sapphire-based and silicon carbide-based epitaxy to be processed into special-shaped appearance shapes with substrates according to requirements.

Opaque and conductive silicon-based and gallium arsenide-based epitaxy want to be made into a flip-chip structure. Usually, the epitaxial layer is transferred to a transparent substrate, and then the flip-chip structure is prepared. The process is more difficult.

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