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Memory system and programming method thereof

A technology of a memory system and a programming method, which is applied in the field of memory, can solve the problems of occupying time, reduce the read and write speed of the memory, and achieve the effects of improving accuracy, reducing programming interference, and tight threshold voltage distribution

Active Publication Date: 2022-05-20
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When a flash storage device stores a large amount of data, a large amount of verification processing is required, which takes up a lot of time and reduces the read and write speed of the memory. Therefore, on the premise of ensuring the accuracy of data storage, improving the read and write speed of the memory unit is the current issues that need resolving

Method used

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  • Memory system and programming method thereof
  • Memory system and programming method thereof
  • Memory system and programming method thereof

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Embodiment Construction

[0025] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0026] In the drawings, the size, dimensions, and shapes of elements have been slightly adjusted for illustrative purposes. The drawings are examples only and are not strictly drawn to scale. As used herein, the words "approximately," "approximately," and similar words are used as words of approximation, not of degree, and are intended to describe measurements that would be recognized by those of ordinary skill in the art. Or inh...

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Abstract

The application provides a storage system and a programming method. Each word line of the memory is connected to a plurality of storage units, the plurality of storage units include a first storage unit and a second storage unit except the first storage unit, and the programming method includes: performing level 1 programming, so that the first storage unit The threshold voltage of the cell is programmed to be greater than or equal to the final verification voltage of the first memory cell, and the threshold voltage of the second memory cell is programmed to be greater than or equal to the first-level intermediate verification voltage, wherein the first-level intermediate verification voltage of the memory cell is lower than the final verification voltage voltage, the threshold voltage of the first memory cell is greater than the threshold voltage of the second memory cell; and performing Nth level programming, configuring the threshold voltage of a plurality of second memory cells to be greater than or equal to the final verification voltage, where N≥2.

Description

technical field [0001] The present application relates to the field of memory, in particular to a non-volatile memory system and a method for setting a programming voltage thereof. Background technique [0002] Flash storage devices have the characteristics of multiple programming, high storage density, low power consumption, large capacity, fast read and write speeds, and are suitable for storing large amounts of data, showing strong market competition in the field of non-volatile storage has also been used more and more widely. For example, flash storage devices have been widely used in smart phones, cloud storage, computer solid-state drives and other fields. [0003] Flash memory has widely used NAND flash memory chips to process data. Existing NAND flash memory chips generally adopt a multi-level programming method to reduce the coupling interference between word lines of memory cells and improve the accuracy of data access. The multi-level programming method adopts ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C8/08G11C7/12
CPCG11C16/3404G11C8/08G11C7/12Y02D10/00
Inventor 董志鹏李海波
Owner YANGTZE MEMORY TECH CO LTD
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