Electric charge capture non-volatile semiconductor storage unit and manufacture method thereof

Abstract

The invention provides an electric charge capture non-volatile semiconductor storage unit and a manufacture method thereof. The electric charge capture non-volatile semiconductor storage unit comprises a semiconductor substrate, a source region, a drain region and a tunnel insulating layer, and an electric charge capture layer, a barrier insulating layer and a gate electrode layer which are formed on the semiconductor substrate in sequence, wherein the drain region comprises a P-N junction, and the source region comprises a metal semiconductor junction formed by any one of titanium, cobalt, nickel and platinum or a mixture thereof with the semiconductor substrate. The electric charge capture non-volatile semiconductor storage unit has low programming voltage, low programming speed, lower power consumption and higher reliability.

Description

technical field [0001] The invention relates to a non-volatile memory, in particular to a charge-trapping non-volatile semiconductor memory and a preparation method thereof. Background technique [0002] Non-volatile memory (Non-volatile memory) has a wide range of applications in the fields of mobile communications, data terminals, multimedia, consumer electronics, and defense electronic equipment due to its low power consumption, small size, high density, and rewritable characteristics. . [0003] The non-volatile memory mainly includes floating gate (Floating Gate) non-volatile semiconductor memory and charge trapping (Charge Trapping) non-volatile semiconductor memory. The floating gate non-volatile semiconductor memory uses polysilicon to form a floating gate, and charges are stored in the floating gate, so if there are any defects in the above-mentioned polysilicon, the charge retention time will be significantly reduced. In contrast, the charge-trapping non-volatile...

AI Technical Summary

Problems solved by technology

In order to generate sufficient hot hole injection at the drain end, the source and drain are both P-N junction structures, which makes it difficult to reduce the programming voltage, low hot electron injection efficiency, slow programming speed, and high power consumption.

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