Semiconductor discharge tube, manufacturing method thereof and overvoltage protection device

Abstract

The embodiment of the invention discloses a semiconductor discharge tube, a manufacturing method thereof and an overvoltage protection device. The semiconductor discharge tube comprises a semiconductor substrate, a plurality of conductive blocks and two electrodes. In any device unit area of the semiconductor substrate, the first conductive block is electrically connected with a first diffusion region and a fourth diffusion region; the second conductive block is electrically connected with the first diffusion region and the fifth diffusion region; the shortest current flowing path from the third diffusion region to the nearest first short-circuit point through the first diffusion region sequentially passes through the part, in contact with the fourth diffusion region, of the first diffusion region, the second short-circuit point and the part, in contact with the fifth diffusion region, of the first diffusion region; and the shortest distance from one end, close to the third diffusion region, of the fourth diffusion region to the second short-circuit point is larger than that from one end, close to the fourth diffusion region, of the fifth diffusion region to the first short-circuit point. According to the technical scheme provided by the embodiment of the invention, the characteristics of low breakover current and high holding current can be realized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor discharge tube, a manufacturing method thereof, and an overvoltage protection device. Background technique [0002] Semiconductor discharge tube (Thyristor Sure Suppresser, TSS for short), also known as solid discharge tube, is a switch type overvoltage protection device. The semiconductor discharge tube can be connected in parallel at both ends of the power receiving equipment. When overvoltage such as lightning strike and surge interference occurs, the semiconductor discharge tube will be turned on to discharge the surge voltage and surge current, thereby protecting the power receiving of the subsequent stage. equipment, to prevent the receiving equipment from being damaged due to high surge voltage. [0003] The semiconductor discharge tube is made of the principle of a thyristor, and relies on the breakdown current of the PN junction to trigger the dev...

AI Technical Summary

Problems solved by technology

In the prior art, when the semiconductor discharge tube has the characteristics of low breakover current and low sustaining current, it is difficult to turn off; while the semiconductor discharge tube has the characteristics of high breakover current and high sustaining current, there is a problem of high residual voltage

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