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A kind of LED epitaxial structure, LED chip and LED epitaxial structure preparation method

An epitaxial structure and scope technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor ohmic contact in the production of electrodes, laser peeling damage, etc., and achieve the effect of enhancing success rate and yield, and improving leakage rate increase

Active Publication Date: 2022-05-31
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to improve the damage caused by laser lift-off and the problem of poor ohmic contact of electrodes

Method used

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  • A kind of LED epitaxial structure, LED chip and LED epitaxial structure preparation method
  • A kind of LED epitaxial structure, LED chip and LED epitaxial structure preparation method
  • A kind of LED epitaxial structure, LED chip and LED epitaxial structure preparation method

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Embodiment Construction

[0038] For the convenience of description, this paper uses terms representing relative positions in space to describe, such as "upper", "lower",

[0040] The LED epitaxial structure sequentially includes a substrate 10, a first buffer layer 20, a first UGaN layer 30, and a lift-off protection from bottom to top

[0041] As shown in FIG. 2, the first UGaN layer 30 is peeled off using an existing lift-off technology (eg, laser lift-off technology), and the

[0044] Here, the exfoliation protective layer 40 is an example of a composite structure of Al / AlGaN for illustration, of course, in other implementations

[0047] FIG. 4 is a schematic diagram of an LED chip in the present invention, please refer to FIG. 4 .

[0048] The LED chip includes the above-mentioned LED epitaxial structure (stripping the protective layer 40, the second buffer layer 50, the second UGaN layer 60, the N

[0051] Step S1: growing the first buffer layer 20 and the first UGaN layer 30 on the substrate 10;

[0...

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Abstract

The invention discloses an LED epitaxial structure, an LED chip and a method for preparing the LED epitaxial structure. The LED epitaxial structure sequentially includes a substrate, a first buffer layer, a first UGaN layer, a peeling protective layer, a second buffer layer, a second UGaN layer, an N-type GaN layer, a multi-quantum well light-emitting layer, and a P-type GaN layer from bottom to top. GaN layer. The present invention increases the design of the peeling protective layer, the existing peeling technology will not cause damage to the upper epitaxial structure, and can improve the leakage rate increase caused by the damage of the upper layer epitaxial structure caused by the immature peeling technology, and will not affect the electrical performance of the vertical chip, thereby Enhance vertical structure laser lift-off success and yield.

Description

A kind of LED epitaxial structure, LED chip and LED epitaxial structure preparation method technical field The present invention relates to a kind of LED epitaxial structure, LED chip and LED epitaxial structure preparation method, relate in particular to a kind of modified The invention provides an LED epitaxial structure with good peeling damage and high electrode ohmic contact, an LED chip and a preparation method of the LED epitaxial structure. Background technique [0002] With the gradual application of LEDs in the field of lighting, the market has higher and higher requirements for the light efficiency of white LEDs, and GaN-based Straight structure LED has single-sided light output, good heat dissipation capability, and can carry large current injection, and vertical structure LED has current The advantages of uniform distribution and less heat generation. [0003] The GaN-based vertical LED epitaxial structure includes a substrate, a buffer layer, a UGaN layer, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/00
CPCH01L33/06H01L33/12H01L33/0075H01L33/0093
Inventor 徐洋洋江汉徐志军黎国昌程虎王文君苑树伟
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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