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Vce-based short-circuit and open-circuit fault monitoring method for an IGBT in an SST

A technology of open circuit fault and fault identification, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problem of low accuracy, avoid embedding and packaging damage, reduce workload and redundancy, and improve intelligence The effect of optimization level and reliability

Pending Publication Date: 2021-12-28
HUANENG CLEAN ENERGY RES INST +2
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  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for monitoring IGBT short-circuit and open-circuit faults in SST based on Vce, so as to solve the problem that in the prior art, electrical parameters such as thermal resistance are usually used to monitor IGBT faults, and the accuracy is not high.

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  • Vce-based short-circuit and open-circuit fault monitoring method for an IGBT in an SST
  • Vce-based short-circuit and open-circuit fault monitoring method for an IGBT in an SST
  • Vce-based short-circuit and open-circuit fault monitoring method for an IGBT in an SST

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Embodiment approach

[0032] The embodiment of the present invention aims at the problem of faults that occur when IGBTs are used in parallel, and proposes an effective electrical parameter for IGBT fault monitoring in the application of solid-state transformer topology, which can effectively reflect the IGBT short-circuit and open-circuit faults of different numbers and position combinations. Based on the single-chip fault monitoring of electrical parameters, it has been expanded and extended, which effectively improves the reliability of the system.

[0033] Step 1: Analyze the failure mechanism of solid state transformer (SST) and IGBT

[0034] The main types of faults during SST operation are: overload, IGBT latching or breakdown, load or bridge arm short circuit, etc. If the current flowing through the IGBT is too large, it will endanger the normal operation of the device and cause serious consequences. An overcurrent fault can be characterized by an increase in on-state voltage drop and util...

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Abstract

The invention discloses a Vce-based short-circuit and open-circuit fault monitoring method for an IGBT in an SST. The method comprises the following steps: acquiring a VCE voltage waveform of a collector-emitter voltage VCE of the IGBT in a three-phase solid-state transformer; inputting the VCE voltage waveform into a preset fault identification machine learning model for fault identification; and enabling the preset fault identification machine learning model to output an IGBT identification result. According to the invention, the collector-emitter voltage of the IGBT is directly obtained, and the fault condition of an IGBT switching device can be visually and accurately reflected.

Description

technical field [0001] The invention belongs to the technical field of solid-state transformer operation state monitoring, and in particular relates to a Vce-based method for monitoring IGBT short-circuit and open-circuit faults in SST. Background technique [0002] Faults and failures of high-power devices during operation have become the main cause of grid operation failures, and more than 30% of power equipment failures are caused by power electronic converter system failures. On-line monitoring and locating the fault status of high-power devices can reduce the workload and redundancy of maintenance and replacement, and improve the intelligent level and reliability of system operation. [0003] Solid-state transformers (SST) consist of high-frequency transformers and integrated simplified power electronics, including high- and low-voltage side converters and DC-DC converters. In addition to the step-up and step-down functions of traditional transformers, SST can also pro...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 郭小江张晓辉曹秋玲车延博汤海雁申旭辉傅望安张育钧苏人奇杨建雄李铮赵瑞斌付明志孙栩潘霄峰秦猛李春华关何格格
Owner HUANENG CLEAN ENERGY RES INST
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