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Film Bulk Acoustic Resonator Structure and Film Bulk Acoustic Filter

A thin-film bulk acoustic wave and resonator technology, applied in the field of filters, can solve problems such as performance degradation of thin-film bulk acoustic wave resonators, and achieve the effects of preventing performance degradation, improving yield, and reducing acoustic wave loss

Active Publication Date: 2022-02-15
深圳新声半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention provides a thin film bulk acoustic resonator structure and a thin film bulk acoustic wave filter, which are used to solve the problem that the performance of the thin film bulk acoustic resonator is degraded by the sound wave loss of the resonator and the filter formed by the resonator:

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  • Film Bulk Acoustic Resonator Structure and Film Bulk Acoustic Filter

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Embodiment Construction

[0059] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0060] Embodiments of the present invention propose a thin film bulk acoustic resonator, such as figure 1 and figure 2 As shown, the thin film bulk acoustic resonator includes a substrate with a trapezoidal groove; a buffer layer is arranged above the substrate; a first cavity is formed between the groove and the buffer layer; A zigzag piezoelectric layer; the lower surface of the zigzag protrusion of the piezoelectric layer is provided with a first electrode; a second cavity is formed between the first electrode and the buffer layer; the zigzag piezoelectric layer The upper surface is provided with a second electrode; the protective layer covers the second electr...

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Abstract

The invention proposes a thin film bulk acoustic wave resonator structure and a thin film bulk acoustic wave filter, the thin film bulk acoustic wave resonator structure. The film bulk acoustic resonator comprises a substrate with a trapezoidal groove; a buffer layer is arranged above the substrate; a first cavity is formed between the groove and the buffer layer; a zigzag piezoelectric layer is arranged above the buffer layer The lower surface of the piezoelectric layer is provided with a first electrode; a second cavity is formed between the first electrode and the buffer layer; the upper surface of the piezoelectric layer is provided with a second Two electrodes; the protection layer covers the second electrode and the exposed surface of the deposited piezoelectric layer.

Description

technical field [0001] The invention provides a thin-film bulk acoustic wave resonator structure and a thin-film bulk acoustic wave filter, belonging to the technical field of filters. Background technique [0002] The resonator is the core component of the filter, and the performance of the resonator directly determines the performance of the filter. Among the existing resonators, the Film Bulk Acoustic Resonator (FBAR) is due to its small size, low insertion loss, large out-of-band suppression, high quality factor, high operating frequency, large power capacity and anti-static shock Good ability and other characteristics, it has a very broad application prospect in modern wireless communication technology. At that time, in the existing resonator, the piezoelectric layer between the adjacent thin film bulk acoustic resonators was connected, and the piezoelectric layer in this region was directly in contact with the substrate, so when the thin film bulk acoustic resonator w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/56H03H9/58
CPCH03H9/02015H03H9/02047H03H9/564H03H9/582
Inventor 魏彬
Owner 深圳新声半导体有限公司