Pixel array readout structure of CMOS image sensor
An image sensor and pixel array technology, applied in the field of image sensors, can solve problems such as bad lines, bad lines that cannot be eliminated through calibration, and detectors that cannot be used for imaging, etc., to achieve the effect of solving image abnormalities
Pending Publication Date: 2022-01-28
成都善思微科技有限公司
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Problems solved by technology
The charge generated by the PN junctions on the left and right sides under the light is absorbed by the abnormal PN junction, resulting in abnormal signals of the PN junctions on the left and right sides
Therefore, if the signal line of a column of pixels is broken, three or even five consecutive columns of broken lines will be generated.
[0004] In image post-processing, a single bad line can be eliminated by calibration, but continuous multiple bad lines cannot be eliminated by calibration, so when there are multiple continuous bad lines, this detector cannot be used for imaging, only Can be scrapped
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Embodiment 1
[0033] The readout structure of the existing CMOS image sensor pixel array is as follows: figure 1 As shown, in the column direction, each column of pixels shares a signal line, such as figure 1 DL, DL, ...DL in , each signal line is connected to the inverting input terminal of the integrator operational amplifier, and the positive input terminal of the integrator operational amplifier is connected to the reference voltage VREF. After the pixel switch of each row is turned on, the photogenerated charge of the photodiode in the pixel array of the CMOS image sensor is transferred to the integrator capacitor and output as a voltage, and the voltage of the photodiode is reset to VREF.
[0034] Since there is only one signal line for each column of pixels, and the length of this signal line exceeds 10cm, and its width is generally only 1um~2um, the column signal line is prone to disconnection in the pixel area. If the signal line DL in figure 2 The middle position 2 is discon...
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The invention discloses a pixel array readout structure of a CMOS image sensor. The readout structure comprises the CMOS image sensor pixel array and an integrator circuit array arranged on the CMOS image sensor pixel array, the readout structure further comprises a charge release circuit array, the charge release circuit array is arranged on the side away from the integrator circuit array, and charge release circuits in the charge release circuit array are electrically connected with column signal lines in the CMOS image sensor pixel array. According to the pixel array readout structure of the CMOS image sensor, the charge release circuit array is additionally arranged on the side, away from the integrator circuit array, of the pixel array of the CMOS image sensor, so that charges accumulated by pixels in bad columns are removed, and adjacent columns are not affected.
Description
technical field [0001] The invention relates to the technical field of image sensors, in particular to a pixel array readout structure of a CMOS image sensor. Background technique [0002] The pixel array readout structure of the existing CMOS image sensor is as follows: figure 1 As shown, each column of pixels has only one signal line, and the length of this signal line exceeds 10cm, and its width is generally only 1um to 2um, so the column signal line is prone to disconnection in the pixel area. [0003] The disconnection of the column signal line will cause the photogenerated charge of some pixels to accumulate continuously, such as image 3 as shown, image 3 The three PN junctions are arranged adjacent to each other, and the middle PN junction switch is disconnected. Under the light, the PN junction continuously accumulates photogenerated charges, and the voltage of the PN junction cathode continues to decrease. If the voltage at both ends of the PN junction is greate...
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IPC IPC(8): H04N5/374H04N5/378H04N5/357H04N5/361
CPCH04N25/60H04N25/63H04N25/76H04N25/75
Inventor朱程举尤六一罗杰
Owner成都善思微科技有限公司