Read voltage optimization processing method, device and ssd device of ssd device
A processing method and technology of reading voltage, applied in read-only memory, information storage, static memory, etc., can solve the problems of increased risk, difference, crossing of adjacent states, etc., and achieve the effect of reducing risk
Active Publication Date: 2022-07-15
DERA CO LTD
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[0002] NAND Flash has been widely used in the storage field due to its advantages such as large storage density, low power consumption, compatibility with silicon technology, good polymorphic characteristics, and non-volatility. The performance decreases in the later period of use, and the risk of unrecoverable errors (UNC, Uncorrectable Error) increases
The fundamental reason is that when information is initially written into NAND Flash, the threshold voltage distribution is normal and the boundaries between each storage state are clear, but because of the number of programming and erasing, Retention time and temperature, read operations, between memory cells, physical storage The influence of factors such as the difference between layers will cause the threshold voltage distribution to drift, the distribution will widen, and the distribution will be deformed, making the boundary between storage states blurred, and there will be a large number of errors in the information read by the default read voltage. The growing risk of a UNC
Usually NAND Flash internally provides a read retry method, that is, a fixed offset read voltage method to correct errors, but this method is not enough
[0003] At present, in order to solve the problem of threshold voltage distribution deformation and serious adjacent state crossing, the usual way is to obtain the optimal read voltage by modeling prediction or using different algorithms for multiple readout data to prevent UNC, but these methods exist Essential defects, for example, in predicting the best read voltage method, through analysis and modeling, several main factors that affect the threshold voltage distribution are considered. Different modeling methods consider different main factors, and the model considerations cannot be completely consistent with the real one. The application scenario is consistent, and there is a difference between the predicted optimal read voltage and the actual read voltage
For another example, in the method of reading data multiple times, and then analyzing and processing the data according to a certain algorithm to obtain the optimal read voltage, the threshold voltage distribution is at the lowest point due to the inherent random flip probability of storage information 0 / 1 in the storage unit. The jitter is obvious. In addition, the optimal read voltage obtained by different algorithms may be different, and there is a certain error in the read data itself, and then the optimal read voltage obtained through these data and the real optimal read voltage will inevitably be different. , resulting in the read information is still UNC
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[0034] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be more thoroughly understood, and will fully convey the scope of the present disclosure to those skilled in the art.
[0035] It will be understood by those skilled in the art that the singular forms "a", "an", "the" and "the" as used herein can include the plural forms as well, unless expressly stated otherwise. It should be further understood that the word "comprising" used in the description of the present invention refers to the presence of stated features, integers, steps, operations, elements and / or components, but does not exclude the...
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The present invention provides a read voltage optimization processing method, device and SSD device for an SSD device. The method includes: obtaining an optimum read voltage of a storage unit; reading the storage unit with the optimum read voltage and storing When the data is stored, the read voltage scan is continued according to the specified read voltage scan range around the optimal read voltage. The read voltage optimization processing method, device and SSD device of the SSD device proposed by the present invention, on the basis of obtaining the optimum read voltage, perform a small-scale reading according to the specified read voltage scan range around the optimum read voltage Voltage scanning to solve the problem of the difference between the current optimal read voltage and the real optimal read voltage, and minimize the risk of NAND Flash UNC.
Description
technical field [0001] The present invention relates to the technical field of data storage, and in particular, to a read voltage optimization processing method and device of an SSD device, and an SSD device. Background technique [0002] NAND Flash has been widely used in the storage field due to its advantages of large storage density, storage capacity, low power consumption, compatibility with silicon technology, good polymorphic characteristics, and non-volatility. After use, the performance is degraded, and the risk of unrecoverable errors (UNC, Uncorrectable Error) increases. The fundamental reason is that when information is initially written into NAND Flash, the threshold voltage distribution is normal and the demarcation between each storage state is clear, but because of the number of programming erasures, retention time and temperature, read operations, between storage cells, physical storage The influence of factors such as differences between layers will cause ...
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IPC IPC(8): G11C16/26G11C16/34
CPCG11C16/26G11C16/3404
Inventor 张易孙丽华薛红军张建涛
Owner DERA CO LTD