Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof

A hybrid structure, semiconductor technology, used in metal/metal oxide/metal hydroxide catalysts, preparation of organic compounds, preparation of aminohydroxy compounds, etc., can solve the problem of inability to control the size of metal nanoclusters

Pending Publication Date: 2022-02-25
HONDA MOTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another disadvantage of solution synthesis is the inability to control the size of metal nanoclusters

Method used

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  • Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof
  • Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof
  • Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof

Examples

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preparation example Construction

[0049] figure 1 is an exemplary method 100 of fabricating a metal-semiconductor hybrid structure in accordance with at least one aspect. Exemplary method 100 can include at operation 101, under first conditions (eg, first reaction conditions), will comprise one or more elements (eg, metals) from Groups 11-14 of the Periodic Table of Elements A first precursor of is introduced into an amine and an anion precursor (e.g., a Group 15-Group 16 element such as sulfur) to form a semiconductor nanoparticles. Here, and as a non-limiting example, the semiconductor nanoparticles may be cadmium sulfide nanoparticles. Semiconductor nanoparticles may have one or more of those properties described above.

[0050] According to at least some aspects, the first precursor comprising one or more elements from Groups 11-14 of the Periodic Table may include Cu, Ag, Au, Zn, Cd, Hg, In, Pb, or combinations thereof combination. In some aspects, the first precursor may comprise a ligand, such as a...

Embodiment 1

[0076] Embodiment 1: the synthesis of cadmium sulfide nanoparticles

[0077] In argon (Ar) or N 2 186 mg cadmium acetylacetonate (0.6 mmol), 5.0 g TDA and 38.6 mg sulfur powder were added to the flask under flow. in Ar or N 2 After purging for 10 minutes, the mixed solution was heated to 220° C. and maintained at this temperature for 60 minutes. The reaction solution was then cooled to 100°C, and 5 mL of ethanol was added to the flask. The product was isolated by centrifugation at 5000 rpm for 5 minutes. After discarding the supernatant, 2.0 mL of hexane and 6.0 mL of ethanol were sequentially added to the precipitate, and the mixture was centrifuged at 5000 rpm for 5 min. The washing procedure was repeated twice to remove unreacted precursors and surfactants. Store cadmium sulfide in a hydrophobic solvent such as hexane, toluene, or chloroform.

Embodiment 2

[0078] Example 2: Growth of nanoclusters on cadmium sulfide surfaces

[0079] 2.0 g of TDA, 10 mL of toluene, and 10 mg of gold chloride trihydrate (0.025 mmol) were charged into a 25 mL three-necked flask deoxygenated for 10 minutes. Then 2.0 mL of cadmium sulfide solution (cadmium sulfide in toluene, 10 mg / mL) was injected into the flask under Ar flow. Alternatively, the cadmium sulfide solution may be a solution of cadmium sulfide in octadecene, phenyl ether and other solvents. After 20 minutes of argon flow, the flask was heated to 100°C. Argon flow helps to remove oxygen. The reaction was maintained at 100°C for 60 minutes, then the reaction solution was cooled to room temperature, and 5 mL of ethanol (or another hydrophilic solvent such as methanol and acetone) was added. The product was isolated by centrifugation at 5000 rpm for 5 minutes. After discarding the supernatant, 2.0 mL of hexane and 6.0 mL of ethanol were sequentially added to the precipitate, and the m...

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Abstract

The title of the invention is metal-semiconductor hybrid structures, syntheses thereof, and uses thereof. Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure. In another aspect is provided a metal-semiconductor hybrid structure that includes a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and a second component comprising a metal from Group 7-Group 11.

Description

technical field [0001] Aspects of the present disclosure relate generally to semiconductor nanoparticles, metal-semiconductor hybrid structures, methods for making semiconductor nanoparticles, methods for making metal-semiconductor hybrid structures, and methods for making conversion products. Background technique [0002] Metal nanoclusters, and in particular small-sized metal nanoclusters (less than 3 nm), have been widely used in energy catalysis, biomedical imaging and sensing applications due to their large surface area and efficient atom utilization. Owing to their wide range of applications, efforts have been made to develop simple and economical strategies to synthesize small-sized metal nanoclusters. [0003] One conventional method for synthesizing metal nanoclusters on nanoparticle surfaces (eg, metal-semiconductor hybrid structures) is physical vapor deposition (PVD). PVD methods typically employ ultra-high vacuum to deposit metal nanoclusters on nanoparticle su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04C07C213/02C07C215/76B82Y30/00B82Y40/00
CPCB01J27/04B01J35/023C07C213/02B82Y30/00B82Y40/00C07C215/76B01J23/52B01J35/0013B01J35/002B01J23/44B01J23/42
Inventor 陈书堂陈顾刚
Owner HONDA MOTOR CO LTD
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