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Broken line processing method

A processing method and wire quantity technology, which can be used in work accessories, fine work devices, stone processing equipment, etc., and can solve problems such as color difference, abnormality, and wire breakage on the surface of silicon wafers.

Active Publication Date: 2022-03-15
LONGI GREEN ENERGY TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, when the slicing machine is cutting silicon rods, because the diamond wire is in a state of rapid movement for a long time, it is easy to break the wire.
In the prior art, the diamond wire slicing machine is equipped with a broken wire alarm device, and the slicing machine will automatically stop after detecting a broken wire. , if it is cut directly after rewiring, the surface of the cut out silicon wafer will have color difference, line marks and TTV (beyond the tolerance range of the standard size of the silicon wafer) abnormalities, which will easily reduce the pass rate of the silicon wafer, or even scrap it.

Method used

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Embodiment Construction

[0040] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present disclosure as recited in the appended claims.

[0041] Embodiments of the present disclosure provide a disconnection processing method, such as figure 1 As shown, the disconnection processing method includes the following steps:

[0042] 101. When the slicer breaks, acquire the break position and cutting information of the diamond wire.

[0043] Cutting information includes cutting process, diamond wire diameter, number of partici...

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Abstract

The invention provides a broken line processing method, relates to the technical field of photovoltaic silicon wafer cutting, can reduce silicon wafer surface abnormal problems such as color difference, line marks and TTV on the surface of a silicon wafer, and improves the surface quality and qualified rate of the silicon wafer. According to the specific technical scheme, when the slicing machine is subjected to wire breakage abnormity, a broken diamond wire is matched with a reference diamond wire in a preset reference set, the broken diamond wire is replaced with a target reference diamond wire which is most matched with the broken diamond wire, wire net arrangement is carried out again, and then the diamond wire is cut off. And then the silicon rod is pressed down to a wire breaking position and is continuously cut by using an original cutting procedure.

Description

technical field [0001] The present disclosure relates to the technical field of cutting photovoltaic silicon wafers, in particular to a method for processing disconnection. Background technique [0002] Silicon wafers are the main production materials in the fields of semiconductors and photovoltaics. Silicon wafer multi-wire cutting technology is a new type of silicon wafer processing technology. Such as hard and brittle materials for friction, so as to achieve the purpose of cutting processing. During the entire cutting process of the silicon rod, the diamond wire is guided by multiple guide wheels to form a wire net on the main spool, and the workpiece to be processed is fed through the rise of the worktable. Compared with other technologies, the silicon wafer multi-wire cutting technology has the advantages of high efficiency, high production capacity, and high precision. It is currently the most widely used silicon wafer cutting technology. [0003] At present, when t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/00
CPCB28D5/045B28D5/0064
Inventor 管辉李杰成路迪大明刘晓东毛剑波杨浩
Owner LONGI GREEN ENERGY TECH CO LTD