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SCR (Selective Catalytic Reduction) for dual-power electrostatic protection

A technology of electrostatic protection and dual power supply, used in circuits, electrical components, electrical solid devices, etc.

Pending Publication Date: 2022-03-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an SCR for dual power supply electrostatic protection, which is used to solve the problem in the prior art that the traditional SCR can only realize the ESD protection of a single power supply or a single IO

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  • SCR (Selective Catalytic Reduction) for dual-power electrostatic protection
  • SCR (Selective Catalytic Reduction) for dual-power electrostatic protection

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Embodiment Construction

[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0026] see Figure 1 to Figure 2 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides an SCR (Selective Catalytic Reduction) for dual-power electrostatic protection. The SCR comprises a P well and an N well which are positioned in a P-type substrate, edges of the P well and the N well are close to each other; a first P + region, a first N + region and a fourth P + region are arranged in the N well; a second P + region, a second N + region and a third N + region are arranged in the P well; a third P + region is arranged at the boundary of the P well and the N well; the first P + region and the first N + region are jointly connected to a first voltage; the fourth P + region and the third N + region are jointly connected to a second voltage; and the second P + region and the second N + region are grounded together. A conventional LVTSCR structure is optimized, on the basis of the conventional LVTSCR, the P + region is additionally arranged in the N well, the N + region is additionally arranged in the P well, and the N + region and the P + region are connected to the second voltage in a short-circuit mode, so that dual-power-supply protection is achieved, and the structure can also be used for ESD protection between dual IO and can also be used for ESD protection between one power supply and one IO.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to an SCR used for dual power supply electrostatic protection. Background technique [0002] For dual power supply circuits, ESD protection devices need to be added between different power supply domains. And each power supply itself also needs ESD protection from the power supply to ground. A typical dual-supply ESD design requires at least three ESD devices. [0003] SCR (Silicon Controlled Rectifier, SCR) can conduct a large amount of current, so that the excess charge can be quickly discharged to prevent the internal circuit from being damaged, so it is especially suitable for ESD protection. [0004] LVTSCR is often used as an ESD protection device because of its excellent ESD capability and small area. [0005] However, the traditional LVTSCR can only realize the ESD protection of a single power supply or a single IO. Therefore, it is necessary to propose a new SCR struc...

Claims

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Application Information

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IPC IPC(8): H01L29/74H01L29/06H01L27/02
CPCH01L29/7436H01L29/0684H01L29/0603H01L27/0262
Inventor 邓樟鹏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP