Semiconductor device and method for manufacturing semiconductor device
A technology for semiconductors and connecting conductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as degradation of operational reliability of three-dimensional semiconductor devices
Pending Publication Date: 2022-05-13
SK HYNIX INC
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Problems solved by technology
However, as the number of stacked layers increases, the operational reliability of a three-dimensional semiconductor device may deteriorate
Method used
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[0017] Specific structural or functional descriptions disclosed herein are merely illustrative for the purpose of describing embodiments according to the concept of the present disclosure. Embodiments according to the concepts of the present disclosure may be embodied in various forms and should not be construed as limited to the specific embodiments set forth herein.
[0018] Hereinafter, the terms "first" and "second" are used to distinguish one component from another, not to describe the number or order of the components. These terms may be used to describe various components, but these components are not limited by these terms.
[0019] Some embodiments relate to semiconductor devices in which integration is enhanced and operational reliability is improved.
[0020] Figure 1A is a cross-sectional view of a semiconductor device according to an embodiment of the present disclosure. Figure 1B yes Figure 1A A magnified view of region A is shown. Figure 1C is a plan view...
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The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. A semiconductor device includes: a first insulating layer; wiring contacts spaced apart from each other by the first insulating layer; and a bonding wiring connected to the wiring contact. Each wiring contact includes a base portion in the first insulating layer and a protruding portion protruding from an inside to an outside of the first insulating layer. The protruding portion of the wiring contact is in contact with the bonding wiring.
Description
technical field [0001] The present disclosure generally relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly, to a three-dimensional semiconductor device and a method of manufacturing the three-dimensional semiconductor device. Background technique [0002] A semiconductor device includes memory cells capable of storing data. A three-dimensional semiconductor device includes memory cells arranged in three dimensions, making it possible to reduce the area occupied by the memory cells on a substrate. [0003] In order to increase the degree of integration of a three-dimensional semiconductor device, the number of stacked levels of memory cells of the three-dimensional semiconductor device may be increased. However, as the number of stacked levels increases, the operational reliability of the three-dimensional semiconductor device may deteriorate. Contents of the invention [0004] In an embodiment of the present di...
Claims
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IPC IPC(8): H01L23/538H01L27/11568H01L27/11578H01L21/768
CPCH01L23/5386H01L21/76897H01L21/76895H10B43/30H10B43/20H01L25/50H01L25/18H01L2225/06541H01L2224/48453H01L24/48H01L24/05H01L2224/08145H01L2224/80895H01L2224/80896H01L2224/04042H01L2224/80357H01L2224/9202H01L2224/73251H01L2224/9222H10B41/50H10B41/27H10B43/50H10B43/27H01L2224/05557H01L2224/05578H01L2224/05567H01L2924/00014H01L2224/80001H01L2224/03H01L2224/08H01L2224/48H01L2224/85H01L24/49H01L24/46H01L23/485H01L25/0657H10B43/35H10B43/40H01L24/45H01L2924/14511H01L24/08H01L24/03H01L24/80H01L2224/03614H01L2224/05017H01L2224/4502H01L2224/45124H01L2224/45147H01L2924/1431H01L2924/1444
Inventor 李南宰
Owner SK HYNIX INC