Visible-infrared dual-band photoelectric detector

Abstract

According to the visible-infrared dual-band photoelectric detector provided by the embodiment of the invention, the PIN photoelectric detection structure and the metal-semiconductor contact interface barrier structure are utilized, so that the quantum efficiency of middle and far infrared bands is improved, and meanwhile, the visible-infrared dual-band detection function of the photoelectric detector is realized. The detector has the advantages that when light is vertically incident, visible light is fully absorbed and detected by the PIN structure when passing through the PIN structure, and as silicon has good transmission performance for light in an infrared band, the light in the infrared band passes through the substrate layer and is reflected by the metal film reflecting layer, the light in the infrared band is reflected to the microstructure layer, and the light in the infrared band is reflected by the PIN structure. The characteristic of the microstructure layer is utilized to enhance absorption of infrared band light, so that a carrier obtains energy to jump to a Fermi level and cross a potential barrier to enter a semiconductor substrate, electrons and holes are collected by metal electrodes on the two sides respectively, high-quantum-conversion-efficiency absorption detection is performed on the infrared band light, visible-infrared dual-band detection is realized, and the visible-infrared dual-band detection is realized. According to the invention, the detection spectrum range can be greatly improved, and the application field is widened.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a visible-infrared dual-band photodetector. Background technique [0002] Silicon-based photodetectors, as the main force of detection devices in the visible and near-infrared bands, have the advantages of high efficiency, low power consumption, small size, anti-vibration, low price and easy integration with circuits, etc., and are widely used in various fields. Since the bandgap width of silicon is about 1.1eV, silicon has a response in the visible light and near-infrared bands, but for photons with energy less than 1.1eV, due to the relatively large bandgap width of silicon materials, silicon photodetectors are in the middle and far infrared bands. The light absorption of silicon-based photodetectors is almost zero, which to a certain extent restricts the development of silicon-based photodetectors in the near-infrared and mid-to-far infrared light bands with wavelength...

AI Technical Summary

Problems solved by technology

Since the bandgap width of silicon is about 1.1eV, silicon has a response in the visible light and near-infrared bands, but for photons with energy less than 1.1eV, due to the relatively large bandgap width of silicon materials, silicon photodetectors are in the middle and far infrared bands. The light absorption of silicon-based photodetectors is almost zero, which to a certain extent restricts the development of silicon-based photodetectors in the near-infrared and mid-to-far infrared light bands with wavelengths greater than 1.1 μm, and the existing silicon-based photodetectors mainly perform single-band spectral detection. , the detection spectral range is limited, and it has limitations in wide-band detection, which limits its application in some fields

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