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In-memory arithmetic logic design method based on unipolar flipping spin-orbit torque magnetic memory

A spin-orbit and computing logic technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as the gap in memory computing speed and reliability, reduce power consumption and delay, and eliminate data write-back The effect of operation and speed increase

Pending Publication Date: 2022-07-05
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Application Information

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Problems solved by technology

This will make it have a large gap in speed and reliability compared with in-memory operations implemented by other non-volatile storage technologies

Method used

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  • In-memory arithmetic logic design method based on unipolar flipping spin-orbit torque magnetic memory
  • In-memory arithmetic logic design method based on unipolar flipping spin-orbit torque magnetic memory
  • In-memory arithmetic logic design method based on unipolar flipping spin-orbit torque magnetic memory

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Embodiment Construction

[0051] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

[0052] like Figure 4 As shown, an in-memory operation logic design method based on a unipolar flipped spin-orbit torque magnetic memory, comprising:

[0053] Step 1: Design TRS logic and RD logic through basic read logic and write logic in the array;

[0054] Basic read and write logic proposes two basic logics:

[0055] Junction resistance value conversion logic (Tunnel Resistance Switching Logic, TRS) and read result delay logic (Read Delay Logic, RD).

[0056] TRS logic such as figure 1 As shown, for two memory cells A and B in the same column in the memory array, the difference in the stored resistance values ​​of cell A (controlling cell) generates currents of different magnitudes to perform write logic operations on cell B (the written cell).

[0057] The RD logic uses the principle of result latching in the read circuit to perform...

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Abstract

The invention discloses an in-memory arithmetic logic design method based on a unipolar flipping spin-orbit torque magnetic memory. TRS logic and RD logic are designed through basic read logic and write logic in an array; according to the unipolar flipping characteristic of the spin-orbit torque magnetic memory, on the basis of read logic, write logic, TRS logic and RD logic, in-memory arithmetic logic is designed, and the in-memory arithmetic logic comprises two-input AND logic, two-input OR logic, three-input more selection logic and one-bit full addition logic. According to the method, the problem that the spin-orbit torque magnetic memory needs to be recovered for a long time after the state is turned over is solved to the greatest extent, and the data write-back operation is avoided by covering the input data with the output result.

Description

technical field [0001] The invention belongs to the technical field of non-volatile memory design, in particular to an in-memory operation logic design method based on a unipolar inversion spin orbit torque magnetic memory. Background technique [0002] In recent years, more and more storage technologies have been applied to in-memory computing. Compared with volatile memory, non-volatile memory has the following advantages: 1. Non-volatile, data will not be lost after power failure; 2. Fast read and write speed; 3. Low static power consumption, etc. Therefore, non-volatile memory is widely used in the field of in-memory computing. [0003] Magnetic random access memory (Magnetic Random Access Memory, MRAM) in non-volatile storage technology is widely used in in-memory computing. There are two main types: Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) MRAM). Compared with traditional SOT-MRAM a...

Claims

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Application Information

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IPC IPC(8): G11C11/16G06F7/57
CPCG11C11/165G11C11/1673G11C11/1675G06F7/57
Inventor 刘伟强祝浩男吴比
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS