Semiconductor device and mfg method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as diffusion and aging of electrical characteristics of capacitive elements
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Embodiment 1
[0050] Refer to the following figure 1 , to illustrate the semiconductor device of Embodiment 1 of the present invention.
[0051] figure 1 The cross-sectional structure of the semiconductor device of the first embodiment is shown. Such as figure 1 As shown, on a semiconductor substrate 10 composed of silicon, a lower electrode 11 composed of a first platinum film, a capacitive insulating film 12 composed of an insulating metal oxide film such as a ferroelectric film or a high dielectric film, and The second platinum film constitutes the upper electrode 13 . These lower electrodes 11 , capacitive insulating film 12 , and upper electrodes 13 constitute a capacitive element. In this case, the lower electrode 11 is larger than the upper electrode 13 in order to lead the metal wiring electrically connected to the lower electrode 11 upward through the side surface of the upper electrode 13 .
[0052] On the semiconductor 10 including the capacitor element, an interlayer ins...
Embodiment 2
[0071] Refer to the following figure 2 , a semiconductor device according to Embodiment 2 of the present invention will be described.
[0072] figure 2 The cross-sectional structure of the semiconductor device of the second embodiment is shown. Such as figure 2 As shown, on a semiconductor substrate 20 composed of silicon, a lower electrode 21 composed of a first platinum film, and a capacitive insulating film composed of an insulating metal oxide film such as a ferroelectric film or a high dielectric film are sequentially formed. 22, and the upper electrode 23 composed of the second platinum film, these lower electrodes 21, the capacitor insulating film 22 and the upper electrode plate 23 form a capacitive element.
[0073]On the semiconductor substrate 20 including the capacitor element, an interlayer insulating film 24 composed of a silicon oxide film is deposited on the entire surface; on the interlayer insulating film 24, a contact window 25 for a lower electrode an...
Embodiment 3
[0093] Refer to the following Figure 4 , to illustrate the third embodiment of the semiconductor device of the present invention.
[0094] Figure 4 The cross-sectional structure of the semiconductor device of Example 3 is shown. Such as Figure 4 As shown, on a semiconductor substrate 30 composed of silicon, a lower electrode 31 composed of a first platinum film, and a capacitive insulating film 32 composed of an insulating metal oxide film such as a ferroelectric film or a high dielectric film are sequentially formed, and The upper electrode 33 composed of the second platinum film; the lower electrode 31 , the capacitive insulating film 32 , and the upper electrode 33 constitute a capacitive element.
[0095] On the semiconductor substrate 30 including the capacitor element, an interlayer insulating film 34 composed of a silicon oxide film or a silicon nitride film is deposited on the entire surface, and a contact window 35 for a lower electrode and an upper electrode ar...
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