Auxiliary designing method of contact hole photoetching

An auxiliary design and hole technology, which is applied in the auxiliary design field of contact hole lithography, can solve the problem of shallow focus depth, and achieve the effect of increasing the focal length depth and correcting the optical proximity effect.

Inactive Publication Date: 2005-01-12
NAN YA TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as the resolution of exposure lithography enters the sub-micron manufacturing process, the higher the resolution, the shallower the depth of focus will be.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Auxiliary designing method of contact hole photoetching
  • Auxiliary designing method of contact hole photoetching
  • Auxiliary designing method of contact hole photoetching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Figure 2B to Figure 2D These are the size and focal length diagrams of contact holes of different chain types after exposure through the 2 / 3 ring filter of the off-axis illumination system. Figure 2B There are multiple hole patterns on the photomask, and the multiple hole patterns are connected by a line pattern with a line width of 200 nm. Figure 2C There are multiple hole patterns on the photomask, and the multiple hole patterns are connected by a line pattern with a line width of 240 nm. Figure 2D There are multiple hole patterns on the photomask, and the multiple hole patterns are connected by a line pattern with a line width of 280 nm.

[0033] refer to Figure 2B to Figure 2D , as the line width of the linear pattern connecting multiple contact holes in series increases, the focal depth of the contact holes formed by the exposure machine also increases. In the first embodiment, because the line width of the line pattern connecting the plurality of contact h...

Embodiment 2

[0035] Figure 2E to Figure 2G are the focal distance diagrams showing the size and focal length of contact holes of different chain types after exposure through the on-axis fan-shaped filter of the off-axis illumination system. Figure 2E There are multiple hole patterns on the photomask, and the multiple hole patterns are connected by a line pattern with a line width of 200 nm. Figure 2F There are multiple hole patterns on the photomask, and the multiple hole patterns are connected by a line pattern with a line width of 240 nm. Figure 2G There are multiple hole patterns on the photomask, and the multiple hole patterns are connected by a line pattern with a line width of 280 nm.

[0036] refer to Figure 2E to Figure 2G , as the line width of the linear pattern connecting multiple contact holes in series increases, the focal depth of the contact holes formed by the exposure machine also increases. In the second embodiment, because the line width of the line pattern conne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An assistant design method for contact holes photoetching includes the following steps: determining exposing wavelength of an exposure light source, determining the smallest dephasing line width by interference degree of the exposure, process technology integral parameter and numerical diaphragm, recovering the above mentioned smallest dephasing line width into the smallest line width on light mask in reduced proportion and using linear pattern smaller than the smallest line width to connect multiple contact holes.

Description

technical field [0001] The invention relates to an auxiliary design method for contact hole photolithography; in particular, it relates to forming a contact hole with a better focal length by using the auxiliary design method. Background technique [0002] In a general semiconductor manufacturing process, a hole pattern is used to form a contact hole (C / H for short) on a semiconductor layer through exposure and development. [0003] Figure 1A is a schematic diagram showing the contact hole when exposed through the 2 / 3 ring filter of the off-axis illumination system; Figure 1B It is a schematic diagram showing the size and focal length of the contact hole after exposure through the 2 / 3 ring filter of the off-axis illumination system. Compare Figure 1A and Figure 1B , when the size of the contact hole is about 105nm±10nm, the focal depth of the contact hole is about 0.2μm. [0004] However, as the resolution of exposure lithography enters the sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L21/00H01L21/027H01L21/30
Inventor 吴元薰
Owner NAN YA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap