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Thermally distributed darlington amplifier

A technology of amplifier and heat emission, which is applied in the direction of amplifiers, amplifier protection circuit layout, amplifiers with only semiconductor devices, etc., and can solve problems such as components that are not suitable for parallel connection

Inactive Publication Date: 2006-03-08
SIRENZA MICRODEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Eriksson's circuit stabilizes breakdown input components, but is not suitable for input devices with parallel components (fingers)

Method used

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  • Thermally distributed darlington amplifier
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Embodiment Construction

[0029] The invention provides a method and device for realizing thermal ballast emitter of the input stage of the Darlington feedback amplifier, and does not affect the interference and power bandwidth characteristics of the original layout of the Darlington feedback amplifier. To achieve thermal ballasting of the input transistors, the present invention employs a thermal distribution layout that allows emitter ballasting of the input transistors without negatively impacting electrical performance.

[0030] The present invention allows the Darlington two-transistor structure to be used in high power applications. This power application requires that the peripheral circuits of the first and second stages be large enough to handle the high currents required for high power. Therefore, a large number of components can be used for both the input stage and the output stage. The input and output components can be configured as bipolar components connected in parallel (for example: bas...

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Abstract

A Darlington amplifier comprising a first stage (110) and a second stage (112). The first stage (110) generally comprises one or more first transistors (Q1a, Q1b) and configured to generate a first (A) and a second (B) signal in response to an input signal (RF_in). The second stage (112) generally comprises one or more second transistors (Q2a, Q2b) and may be configured to generate an output signal (RF_out) in response to the first (A) and second (B) signals. The Darlington amplifier may be configured to provide thermal emitter ballasting of the first transistors (Q1a, Q1b).

Description

technical field [0001] The present invention generally relates to a method and / or structure for implementing an amplifier, and more particularly to a high power Darlington feedback amplifier. Background technique [0002] Due to the higher power bandwidth characteristic of conventional Darlington feedback amplifier circuit topology, its use has been very extensive. However, the Darlington layout cannot be used to ballast the hot emitters of the input transistors without significant loss of RF performance. [0003] see figure 1 , shows a conventional Darlington feedback amplifier 10. In power applications, multiple parallel input and output transistors are required to provide the current and voltage oscillations required for a given transmitter application. Amplifier 10 is shown without input transistor thermal ballasting. Due to this layout technique, transistors Q1A and Q1B themselves are usually susceptible to thermal runaway. Amplifier 10 allows degeneration of the r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/04H03F1/52H03F1/30H03F3/343
CPCH03F3/3435H03F1/302H03F3/04
Inventor 凯文·W·小林斯蒂芬·T·法里斯
Owner SIRENZA MICRODEVICES