System and technological process capable of removing copper oxide and water vapor on semiconductor crystal chip surface

Abstract

The invention relates to supercritical carbon dioxide system and process flow for removing oxide of copper and aqueous vapour on surface of semiconductor wafer. Based on the invention, the system includes following parts: equipment of supercritical carbon dioxide utilized for forming fluid body of supercritical carbon dioxide; pre-treatment equipment for reaction utilized for adding solubility promoter and stepping up temperature of fluid body of supercritical carbon dioxide; reaction cavity providing reaction between semiconductor wafer and fluid body of supercritical carbon dioxide under presetting temperature and pressure; end point detector connected to the reaction cavity in order to detect reactive end point of semiconductor wafer; recovery unit utilized to collect fluid body from the end point detector and equipment of supercritical carbon dioxide.

Description

technical field [0001] The invention relates to a system and process flow capable of removing copper oxide and water vapor on the surface of a semiconductor wafer, in particular to a supercritical carbon dioxide system and process flow capable of removing copper oxide and water vapor on the surface of a semiconductor wafer. Background technique [0002] In recent years, in order to meet the development of component size reduction and the need to increase the operating speed of components, copper metal with low resistivity constant and high electron migration resistance has been gradually used as the material of metal interconnection, replacing the previous aluminum metal . [0003] Metal copper itself has many inherent advantages, such as: (1) low resistance characteristics, its resistance value is 1.7μΩ-cm, while that of aluminum is 2.7μΩ-cm; (2) good electron migration resistance, higher than aluminum (3) good resistance to stress-induced void formation (stress-induced vo...

AI Technical Summary

Problems solved by technology

[0006] The temperature rise and fall of the furnace tube machine requires more precise control, so the process time is often as long as several hours

And because the furnace tube machine is a batch operation, the throughput of each process is limited

Moreover, the furnace tube machine is composed of a reactor device, a gas transmission device, an exhaust device and a process flow control device, and its overall combination will occupy a considerable machine area (foot print). will affect

In addition, the furnace tube machine is composed of several devices. The overall power consumption of the machine is relatively large, so the heat generated is also more, which virtually increases the energy consumption.

For the existing 8-inch (200mm) wafer fabs, the above shortcomings are tolerable; but for the 12-inch (300mm) wafer fabs, the area required for each process flow machine is larger than that of an 8-inch wafer machine. Therefore, if we can address the above factors and develop a machine with the same effect, high throughput, less foot print, and low energy cost, it will be a great advantage for all wafers. round factory is happy to see

Images