Contact window mfg. method and structure thereof
A manufacturing method and contact window technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of indium tin oxide film peeling and high cost
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[0043] The present invention forms a conductive nanoparticle layer at the bottom of the contact window, which can solve the known problem that the indium tin oxide film is peeled off due to the self-redox reaction caused by the direct contact between the metal layer under the contact window and the indium tin oxide film. Several embodiments are given below to describe in detail.
[0044] Figure 1A to Figure 1D is a schematic cross-sectional view of the manufacturing process of the contact window according to a preferred embodiment of the present invention. Please refer to Figure 1A , first provide a substrate 100, wherein a conductive layer 102 has been formed on the substrate 100, and a dielectric layer 104 has been formed on the conductive layer 102, and a contact window opening 106 has been formed in the dielectric layer 104, exposing the conductive layer 102 .
[0045] If the present invention is applied in the manufacturing process of thin film transistor liquid cryst...
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Abstract
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