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Protective transistors

A triode and protection technology, applied in the field of improvement of triode and its overall structure, can solve the problems of complicated wiring, short service life, unfavorable installation and maintenance, etc., and achieve the effects of reasonable arrangement, improved service life and simple structure

Inactive Publication Date: 2007-04-25
李帮庆
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention mainly solves the technical problems of poor overcurrent or overvoltage protection performance and short service life of existing semiconductor triodes.
[0006] At the same time, the invention also solves the technical problems that the existing semiconductor triode overcurrent or overvoltage protection circuit structure is relatively complicated, the wiring is relatively complicated, and it is not conducive to installation and maintenance.

Method used

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  • Protective transistors
  • Protective transistors
  • Protective transistors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1: the outer collector C of the triode is the base of the triode, and an insulating layer 5 is arranged on it; a metal layer connected to the outer emitter E is arranged on the insulating layer 5, and on the metal layer Respectively set with resistor R 2 and the positive electrode t of the thyristor G 1 end; the silicon controlled rectifier G can adopt a four-layer N-pole and P-pole alternate structure, and its upper end is made of a metal layer, which is the negative pole t 2 terminal, the lower end of which is the positive electrode t of the thyristor G 1 end, the upper layer is the g pole; and an inner triode T is arranged on the base, and its collector c is integrated with it, and the emitter e at its upper end is connected to the resistor R 2 And the g pole of the thyristor G is connected; the base located in the middle layer of the inner triode is connected to the negative pole t of the thyristor G through a lead wire 2 terminal and resistor R 1 con...

Embodiment 2

[0022] Embodiment 2: above-mentioned common triode is changed into Darlington tube, and the corresponding three pins of described Darlington tube are similar to the connection method of embodiment 1 (referring to accompanying drawing 2), and both of its circuit working principles are also similar Similar, so it is omitted here.

Embodiment 3

[0023] Embodiment 3: Change above-mentioned common triode into field effect tube, and described resistance R 2 The thermistor PTC is used instead, and other structures and devices are similar, and the corresponding three pins of the field effect tube are similar to the connection method of embodiment 1 (see accompanying drawing 3). When the thermistor PTC heats up and its resistance increases, so that the voltage difference between its two ends exceeds the set value (for example, 0.7V), the thyristor G is turned on, and its gate voltage is short-circuited, and the voltage tends to zero, and the field The effect tube T is pinched off, that is, the current between the collector C and the emitter E is cut off, thereby effectively protecting the field effect tube T from being damaged, avoiding breakdown, improving the service life of the device, and ensuring the entire The circuit operates reliably and safely for a long time. Refer to Embodiment 1 for other contents, which are om...

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Abstract

The invention relates to modified structure of triode possessing function of over-current and over-voltage protection. The scheme is as follows: base electrode b of inner triode T is connected to resistance R1 and positive pole t1 of thyristor G, another end of the resistance R1 is as external base pole B; emitter e of inner triode and g pole of thyristor are connected to resistance R2 in parallel; another end of resistance R2 is connected to negative pole t2 of thyristor are connected in parallel as external emitter E; collector c of the said inner triode is collector C of triode. The said triode can be general semiconductor triode, or Darlington tube, or field effect tube. The invention provides features of simple structure, compact layout, adding function of over-current and over-voltage protection by increasing cost slightly, and raising service life obviously.

Description

technical field [0001] The invention relates to an electronic device, in particular to a triode with the function of overcurrent or overvoltage protection and the improvement of its overall structure. Background technique [0002] The existing known semiconductor triode system is composed of three semiconductor materials combined to form a tube core composed of two PN junctions, which respectively lead to three electrodes of emitter, base and collector and an outer envelope. During operation, emitter current, base current, and collector current flow through the semiconductor triode. Although the base current is small, it controls the magnitude of the larger emitter current and collector current, especially the emitter current and The collector current is sometimes caused by a short circuit or other abnormal faults in the external circuit, causing the current to be greater than the normal value, causing the working semiconductor transistor to overheat and burn out. [0003] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/58H01L23/62H01L29/73
Inventor 李帮庆
Owner 李帮庆