Cleaning solution for removing residue

Abstract

A cleaning solution for removing a residue which comprises an aqueous solution of a water-soluble polymer containing at least one dissolving agent selected from an amine and a fluoride in a salt form dissolved therein. The cleaning solution allows the effective removal of the residue generated during the production of an electronic circuit and also exhibits high anticorosive effect for an insulating film, an insulating film between low dilectric layers, wiring and the like, and further shows reduced bubbling during use.

Description

technical field

[0001] The present invention relates to a residue cleaning solution aimed at cleaning residues generated during ashing, etching, or CMP processing of substrates during the manufacture of electronic circuit patterns. Background technique

[0002] ICs, LSIs, or LCDs on semiconductor wafers are generally manufactured by forming fine electronic circuit patterns on substrates using photolithography technology. Specifically, a photoresist is coated on a substrate wafer formed with an insulating film such as silicon oxide and a wiring layer such as Al, Cu, Si, Ti, or a low-dielectric film composed of SOG and fluorine-based resins. , Exposure and development are performed through a mask on which a desired pattern is formed, and a resist pattern is formed on a desired portion. Then, the insulating film, the wiring layer, or the low-dielectric film are etched from the resist pattern, and then the resist is removed. In the formation of such electronic circuit patterns...