Check patentability & draft patents in minutes with Patsnap Eureka AI!

P-channel field effect transistor dosimeter

A technology of transistors and dosimeters, applied in the field of P-channel field-effect transistor dosimeters, which can solve problems such as inability to obtain dose measurement results

Inactive Publication Date: 2004-04-28
CENT FOR SPACE SCI & APPLIED RES
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the most critical problem with this type of dosimeter is that the dosimeter must be recovered, otherwise the dose measurement result cannot be obtained

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P-channel field effect transistor dosimeter
  • P-channel field effect transistor dosimeter
  • P-channel field effect transistor dosimeter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] See figure 1 and figure 2 As shown, the P-channel field effect transistor dosimeter of the present invention includes a zero temperature coefficient constant current source 1, a P-channel field effect transistor 2, a gate voltage drift calculation circuit 3, and an amplifier and output circuit 4.

[0012] See the schematic circuit diagram figure 2 As shown, the present invention is a P-channel field effect transistor dosimeter. Including P-channel field effect transistor 2 and amplifying and output circuit 4, which also includes:

[0013] A zero temperature coefficient constant current source 1. The zero temperature coefficient constant current source 1 includes: a constant current source composed of a voltage stabilizer LM113 and an operational amplifier A to provide a zero temperature coefficient operating current for the sensor P-channel field effect transistor 2; The output terminal of the zero temperature coefficient constant current source 1 is connected to the gate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The P-channel field effect transistor dosimeter includes one zero-temperature coefficient constant-current source, which has output connected to the drain and grid input end of the P-channel field effect transistor and provides the P-channel field effect transistor with zero-temperature coefficient work current; one grid voltage drift value operating circuit, which has input connected to the output of the operation amplifier B; and one amplifying and output circuit, which is connected to the output of the grid voltage drift value operating circuit. The operation amplifier B following the operation amplifier C and the reference power source of operation amplifier C constitute the grid voltage drift value operating circuit, the reference power source of operation amplifier C is one adjustable three-terminal integrated circuit voltage stabilizer, and one adjustable resistor is connected to pin 2 of the adjustable three-terminal integrated circuit voltage stabilizer.

Description

Technical field [0001] The invention relates to a P-channel field effect transistor dosimeter, in particular to a dosimeter suitable for satellite and spacecraft remote sensing transmission mode. Background technique [0002] Commonly used dosing devices for radiation dose measurement include thermoluminescence dosimeters, solid nuclear track dosimeters, nuclear latex dosimeters, and scintillator dosimeters, and other solid dosimeters. They receive the radiation dose and generate ionizing radiation, and then interpret the radiation. As a result, the radiation dose can be measured. But the most critical problem of this type of dosimeter is that the dosimeter must be recycled, otherwise the dose measurement results cannot be obtained. Summary of the invention [0003] The purpose of the present invention is to provide a P-channel field effect transistor dosimeter, which does not need to recycle the dosimeter, can obtain the dose measurement results, and is particularly suitable fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/16G01T1/17G01T1/24
Inventor 朱光武王世金梁金宝任迪远范隆郭旗李宏孙越强张微王月金松
Owner CENT FOR SPACE SCI & APPLIED RES
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com