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P-channel field effect transistor dosimeter

A technology of transistors and dosimeters, applied in the field of P-channel field-effect transistor dosimeters, which can solve problems such as inability to obtain dose measurement results

Inactive Publication Date: 2005-11-09
CENT FOR SPACE SCI & APPLIED RES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the most critical problem with this type of dosimeter is that the dosimeter must be recovered, otherwise the dose measurement result cannot be obtained

Method used

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  • P-channel field effect transistor dosimeter
  • P-channel field effect transistor dosimeter
  • P-channel field effect transistor dosimeter

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Embodiment Construction

[0011] see figure 1 and figure 2 As shown, the P-channel field effect transistor dosimeter of the present invention includes a zero temperature coefficient constant current source 1, a P-channel field effect transistor 2, a gate voltage drift value calculation circuit 3 and an amplification and output circuit 4.

[0012] Its circuit schematic diagram is shown in figure 2 As shown, the present invention is a P-channel field effect transistor dosimeter. Including P channel field effect transistor 2 and amplification and output circuit 4, which also includes:

[0013] A zero temperature coefficient constant current source 1, the zero temperature coefficient constant current source 1 includes: - a constant current source composed of a voltage regulator LM113 and an operational amplifier A, which provides a zero temperature coefficient operating current for the sensor P channel field effect transistor 2; The output end of the zero temperature coefficient constant current sourc...

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Abstract

The P-channel field effect transistor dosimeter includes one zero-temperature coefficient constant-current source, which has output connected to the drain and grid input end of the P-channel field effect transistor and provides the P-channel field effect transistor with zero-temperature coefficient work current; one grid voltage drift value operating circuit, which has input connected to the output of the operation amplifier B; and one amplifying and output circuit, which is connected to the output of the grid voltage drift value operating circuit. The operation amplifier B following the operation amplifier C and the reference power source of operation amplifier C constitute the grid voltage drift value operating circuit, the reference power source of operation amplifier C is one adjustable three-terminal integrated circuit voltage stabilizer, and one adjustable resistor is connected to pin 2 of the adjustable three-terminal integrated circuit voltage stabilizer.

Description

technical field [0001] The invention relates to a P-channel field effect transistor dosimeter, in particular to a dosimeter suitable for satellite and spacecraft remote sensing transmission. Background technique [0002] Commonly used dosimetry devices for radiation dose measurement include solid dosimeters such as thermoluminescent dosimeters, solid nuclear track dosimeters, nuclear emulsion dosimeters, and scintillator dosimeters. They receive radiation doses and generate ionizing radiation, and interpret their radiation As a result, the radiation dose can then be measured. However, the most critical problem of this type of dosimeter is that the dosimeter must be recovered, otherwise the dose measurement result cannot be obtained. Contents of the invention [0003] The purpose of the present invention is to provide a P-channel field effect transistor dosimeter, which can obtain dose measurement results without recycling the dosimeter, and is especially suitable for use ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/16G01T1/17G01T1/24
Inventor 朱光武王世金梁金宝任迪远范隆郭旗李宏孙越强张微王月金松
Owner CENT FOR SPACE SCI & APPLIED RES
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