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Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as large device scale, complex manufacturing process, and high cost

Inactive Publication Date: 2004-12-01
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, on the side of users of semiconductor devices, taking the above measures results in an increased number of externally mounted components, a correspondingly more complicated manufacturing process, higher costs, larger device scales, etc.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0015] Hereinafter, an example of applying it to a power supply IC including a switch will be used to describe an embodiment of the present invention. Figure 1A with 1B It is a schematic diagram showing the first embodiment of the present invention. Figure 1A Is a block diagram showing the main part of the IC, and Figure 1B It is a longitudinal cross-sectional view showing the device structure.

[0016] Such as Figure 1A As shown, the power supply IC1 including the switch according to the present embodiment includes: a power supply terminal T1, to which a power supply voltage Vcc is applied; a ground terminal T2, to which a ground potential GND is applied; a signal input terminal T3, through which inputs from the microcomputer 2 Logic signal (either high (H) level or low (L) level each time); voltage output terminal T4, through which the predetermined voltage Vo is input to the CPU3 (central processing unit); the regulator part 1a is connected according to the switch signal Tu...

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Abstract

A semiconductor device has an electrostatic protection diode in a signal input portion thereof and is accompanied by a parasitic transistor between the diode and an output control transistor. The semiconductor device further has a dummy transistor that is formed closer than the output control transistor to the electrostatic protection diode, and an output logic determining circuit that keeps the output signal at a predetermined logic level so long as the parasitic transistor formed between the electrostatic protection diode and the dummy transistor is on. With this configuration, malfunctioning caused by a parasitic transistor can be prevented without the use of an externally fitted component.

Description

[0001] This application is based on Japanese Patent Application No. 2003-124821 filed on April 30, 2003, the content of which is incorporated herein by reference. Technical field [0002] The present invention relates to a semiconductor device having an electrostatic protection diode in a signal input part and / or a signal output part, and a parasitic transistor is accompanied between the electrostatic protection diode and an output control transistor. Background technique [0003] Due to its own device structure, a semiconductor device having an electrostatic protection diode in its signal input / output portion inevitably has a parasitic transistor between the electrostatic protection diode and the output control transistor. Therefore, in a semiconductor device having such a structure, if the parasitic transistor is turned on for some reason (for example, an excessively high positive or negative voltage is applied to the signal input terminal), it may appear unintentionally in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L21/822H01L27/02H01L27/04H01L27/06H01L29/73H02H9/00H03K19/003H03K19/0175
CPCH01L27/0255H01L27/0664H01L27/0761
Inventor 梅本清贵
Owner ROHM CO LTD