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High power semiconductor module

A technology of power semiconductors and semiconductors, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc.

Inactive Publication Date: 2005-03-16
HITACHI ENERGY SWITZERLAND AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore preferably, all packages are fixed across the range of IGBT current ratings, with no significant increase in cost for devices with lower current ratings

Method used

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Experimental program
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Embodiment Construction

[0036] figure 2 It is one of several sub-modules of the semiconductor module of the present invention.

[0037] A desired number of semiconductor chips 1, such as IGBTs or diodes, are soldered to a substrate 2 having a low thermal expansion coefficient (for example, made of MO) to form a reliable solder joint between the chip and the substrate. The semiconductor chip 1 has a first electrode on the bottom and a second electrode on the top surface.

[0038] The type and number of semiconductor chips can be selected without any limitation. It is possible to manufacture sub-modules containing only IGBTs, only diodes, or any possible ratio of IGBT to diode.

[0039] On top of the chip 1, a flexible single pressure pin contact 6 is arranged together with several different layers of optimal SCFM. Since these layers are not welded but pressed together (dry pressure contact), they are guided by the molded polyamide submodule housing element 5, which is, for example, glued to the base pla...

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PUM

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Abstract

The stackable power semiconductor module comprises electrically conductive base plates (2), an electrically conductive cover plate (3) and a plurality of semiconductor chips (1). The semiconductor chips are arranged in groups of several on separate base plates in preassembled submodules. The base plates (2) are moveable towards the cover plate (3). The submodules are paralleled inside the module housing. The submodules are fully testable according to their current ratings. Altering the number of submodules paralleled inside the housing can vary the overall current rating of a module.

Description

Technical field [0001] The invention relates to the field of high-power semiconductors. [0002] It relates to a power semiconductor module as described in the preamble of claim 1. Background technique [0003] The application of Integrated Gate Bipolar Transistror (IGBT) technology in power system applications, such as voltage source converters (VSC) for HVDC transmission and power quality management, has reached a new level. [0004] At present, IGBT is the best choice for these applications because it has the following characteristics: [0005] -Low power control because it is a MOS control device, which is advantageous when operating at high voltage levels (several hundreds of KV), for example. [0006] -Transistor operation, which can accurately control the device in a way that is not possible with latching alternatives (for example, the converter may be turned off even in a short circuit). [0007] -High switching speed, thus enabling high switching frequency. [0008] Alth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L23/049H01L25/07H01L25/11H01L25/18H02M7/06H02M7/12
CPCH01L23/049H01L2924/0002H01L25/072H01L23/60H01L25/112H01L2924/13055H01L2924/00
Inventor S·考夫曼T·朗E·赫尔M·尼古拉S·格克尼迪斯
Owner HITACHI ENERGY SWITZERLAND AG